Samsung Electronics Co., Ltd.

Suhee Jeon

Hwan Mook Kim

Seulji Song

A method of reading data from a self-selecting memory includes generating a read pulse that has a polarity opposite to that of a write pulse. The write pulse writes data into a target memory cell in the self-selecting memory. The read pulse is applied to the target memory cell. The read pulse has a first edge that is a starting point of the read pulse and a second edge that is an ending point of the read pulse. A slope of the second edge of the read pulse is adjusted such that an undershoot or overshoot on the second edge of the read pulse increases.

Method of reading data from self-selecting memory, self-selecting memory performing the same and method of operating self-selecting memory using the same

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SUWON-SI, South Korea

Suhee Jeon