Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Nanyang Technological University

Suh Fei Lim

Kok Wai Chew

Lap Chan

Kiat Seng Yeo

Manh Anh Do

Chee Chong Lim

Johnny Kok Wai Chew

Sanford Shao-Fu Chu

Michael Chye Huat Cheng

Wei Gao

Chirn Chye Boon

Ping Qiu

A device having a substrate and a dielectric layer disposed over the substrate is disclosed. The device includes a transformer layout disposed in the dielectric layer. The transformer layout includes an integrated transformer having primary and secondary coil elements. The first and second coil elements are configured to result in noise-self cancellation effect.

Integrated transformer

Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

Transformer with effective high turn ratio

An inductor circuit with high quality (Q) factor includes a primary inductor and a compensation sub-circuit. The compensation sub-circuit is electrically isolated from the primary inductor. The compensation sub-circuit is magnetically coupled with the primary inductor to compensate the loss in the primary inductor.

Tunable high quality factor inductor

A method of forming an integrated circuit is disclosed. The method includes providing a substrate and forming on the substrate a shield structure comprising a shield member and a ground strap. The shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.

Method of fabrication an integrated circuit

Embodiments of the invention provide an integrated circuit structure comprising: a substrate; a shield structure comprising a shield member and a ground strap formed on the substrate, wherein the shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.

Integrated circuit shield structure

An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90&#xb0; in a lateral direction.

Growing community of inventors

Singapore, Singapore

Suh Fei Lim