Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Sugwoo Jung

Sungho Kim

Jinsung An

Miyoung Kim

Sanghyun Jun

Soyeon Park

Kwanghyeok Kim

Jin Hee Jeon

Hideki Horii

Jongmin Lee

Wan-Soon Im

Yongjae Kim

Wangwoo Lee

Jeonghee Park

Jeong-Soo Lee

Jina Lee

Minwoo Woo

Moosoon Ko

Kohei Ebisuno

Chulho Kim

Jingoo Jung

Youngin Hwang

Yonghwan Park

Kyunghyun Choi

Heeyeon Kim

Joohyeon Jo

Jinsuk Lee

Illhwan Lee

Yongseon Jo

Jeong-soo Lee

Kidan Lee

Shinbeom Choi

Byungno Kim

Nalae Lee

Changha Kwak

Yong-Hwan Park

Junghwan Park

Young-Lim Park

Injun Bae

Youngtaek Oh

Yoonjee Shin

Jonguk Kim

Soonoh Park

Jung Moo Lee

ChangSu Kim

Jinil Lee

Semyung Kwon

A display apparatus includes: a substrate including a first area, and a second area adjacent to the first area; a plurality of first pixel circuits at the first area of the substrate, each of the plurality of first pixel circuits including a silicon-based transistor, and an oxide-based transistor; a plurality of second pixel circuits at the second area of the substrate, the plurality of second pixel circuits including transistors; a first shielding layer at the first area, the first shielding layer including a shielding pattern overlapping with the silicon-based transistor of each of the plurality of first pixel circuits; and a second shielding layer at the second area, the second shielding layer including a first through-hole between adjacent second pixel circuits from among the plurality of second pixel circuits. The first shielding layer and the second shielding layer include different materials from each other.

Display apparatus and method of manufacturing the same

A display panel includes: a light emitting element, a driving switching element, a bias switching element and a bias control switching element. The driving switching element is configured to apply a driving current to the light emitting element. The bias switching element is connected to a first electrode of the driving switching element and configured to apply a bias voltage to the first electrode of the driving switching element. The bias control switching element is connected to a first electrode of the bias switching element and configured to apply the bias voltage to the first electrode of the bias switching element.

Display panel and display apparatus including the same

A pixel in which a luminance difference may be reduced during low-frequency driving, and a display apparatus including the same, there is provided a pixel that operates at a first scanning rate in a first mode and operates at a second scanning rate in a second mode, wherein the pixel includes a display element having an anode and a cathode, a first transistor that controls the magnitude of a driving current flowing to the display element according to a gate-source voltage, and a second transistor that is in an off state in the first mode and transmits a bias voltage to the first transistor in response to a first scan signal in the second mode.

Pixel and display apparatus

A pixel circuit includes a light emitting element, a write transistor configured to write a data voltage in response to a write gate signal, a driving transistor configured to generate a driving current based on the data voltage and to apply the driving current to the light emitting element, a compensation transistor configured to diode-connect the driving transistor in response to a compensation gate signal, a first initialization transistor configured to apply a first initialization voltage to a control electrode of the driving transistor in response to an initialization gate signal, and a second initialization transistor configured to apply a second initialization voltage to an anode electrode of the light emitting element in response to a bias gate signal having an activation period longer than at least one of the compensation gate signal and the initialization gate signal.

Pixel circuit and display device having the same

Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

Thin-film transistor, display apparatus including the same, and method of manufacturing display apparatus

A display device includes a display area in which red, green, and blue sub-pixels are arranged, and a touch sensing layer including a conductive pattern, the conductive pattern including touch electrodes arranged in a row direction and a column direction in the display area, and trace lines electrically connected to the touch electrodes, respectively, and extending in the column direction in the display area. Here, the conductive pattern includes touch pattern unit blocks arranged along the row direction, each of the touch pattern unit block including some parts of the plurality of trace lines and at least one touch electrode among the plurality of touch electrodes, and the touch pattern unit block has a size corresponding to an integer multiple of a size of a pixel unit block, wherein the pixel unit block is a minimum repetition unit of the red, green, and blue sub-pixels.

Display device

A display device includes: a light emitting diode; a driving transistor configured to transmit driving current to the light emitting diode; a bias transistor including an input terminal electrically connected to a bias voltage line; a first light emission control transistor including an output terminal electrically connected to an in put terminal of the driving transistor, and a gate electrode configured to receive a light emission control signal; a second light emission control transistor including an input terminal electrically connected to an output terminal of the driving transistor, and a gate electrode configured to receive the light emission control signal; a bias bridge electrode electrically in contact with each of an output terminal of the bias transistor and the input terminal of the driving transistor; and a first light emission control bridge electrode configured to receive the light emission control signal.

A display device includes a light emitting element including an anode, a cathode, and a light emitting layer between the anode and the cathode, a first transistor connected between the anode and a first power line, the first transistor may be switched by a voltage of a node, a second transistor connected between the first transistor and a data line, the second transistor may be switched by a write scan signal, a third transistor connected between the node and the anode, the third transistor may be switched by a compensation scan signal, a fourth transistor connected between the node and an initialization line, the fourth transistor may be switched by an initialization scan signal, an insulating layer on the first to the fourth transistors, and a light blocking pattern protruding from the insulating layer, the light blocking pattern being adjacent to the third transistor and the fourth transistor.

Display device and electronic device including the same

An electronic device includes a display unit having a plurality of pixels. Each of the pixels includes a transistor and a light-emitting element. A plurality of signal lines is connected to the pixels. An encapsulation layer covers the pixels. The display unit includes a display region and a non-display region adjacent to the display region in a plan view. A sensing unit includes a plurality of sensing patterns overlapping the display region. A plurality of sensing pads overlaps the non-display region. A plurality of sensing lines electrically connects the sensing patterns and the sensing pads. A bridge line is connected to a first sensing line and a corresponding first sensing pad. The bridge line is bent to extend in a direction that is different from an extending direction of the first sensing line to connect the bridge line to the first sensing pad.

Electronic apparatus

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern.

Semiconductor device and method of fabricating the same

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Hwaseong-si, South Korea

Sugwoo Jung