Nec Corporation

Tdk Corporation

Suguru Watanabe

Katsumi Kikuchi

Takanori Nishi

Hideyuki Satou

Akira Miyata

Kenji Nanba

Ayami Yamaguchi

Hiroshi Yamazaki

Kunihiro Ueda

Yoshiyuki Mizoguchi

Kazuya Watanabe

Yoshiaki Tanaka

Tetsuya Hiraki

Hirokazu Takahashi

Kenji Kobayashi

Kenzo Makino

Tsuyoshi Yamamoto

Yoshihito Hashimoto

Tomohiro Yamaji

Yasushi Nishioka

Koji Kudo

Kenichi Takano

Yuta Saito

Shin Nakamura

Hisato Sakuma

Hiroshi Kajitani

Yoshimi Kubo

Takashi Manako

Osamu Ishibashi

Tsutomu Yoshitake

Atsumasa Sawada

Hidekazu Kimura

Yuichi Shimakawa

Kazuhisa Sunaga

Hideto Imai

Sadanori Kuroshima

Masato Yano

Hiroaki Fukunishi

Ayami Tanabe

Hideyuki Sugita

Provided is a quantum device capable of suppressing reduction in performance of quantum bit even when a quantum chip is flip-chip mounted on an interposer. A quantum chip () is flip-chip mounted on an interposer () by a bump (). A coplanar line () coupling adjacent quantum bits is formed on the quantum chip (). A gap () is provided, in the interposer (), at a location facing a center conductor () of the coplanar line (). A second ground electrode () is formed around gap (). The interposer () has a connection electrode () connecting the second ground electrode () around the gap (). A bump (A) formed in the vicinity of the connection electrode () is connected to the first ground electrode () and the second ground electrode ().

Quantum device and quantum computer

Provided are an oscillator and a quantum computer capable of suppressing an occupied area of a circuit. An oscillator () includes a resonator () including a plurality of loop circuits in which a first superconducting line (), a first Josephson junction (), a second superconducting line (), and a second Josephson junction () are annularly connected, and a magnetic field application circuit () including an electrode that goes around in a predetermined shape and configured to apply a magnetic field to the loop circuit, in which the electrode is arranged so as to face at least two of the loop circuits.

Oscillator and quantum computer

A magnetic field detection device includes a base, a first yoke, and a magneto-resistive effect element. The first yoke is provided on the base, and includes first and second principal surfaces each extending along a first plane, and a first end surface coupling the first and second principal surfaces. The magneto-resistive effect element is provided on the base, and includes a magnetization free layer disposed at a position overlapped with the first yoke in a first direction along the first plane. The first end surface includes an inverted tapered surface inclined relative to the first plane and extending closer to a center point of the magnetization free layer as being away from the base in a second direction orthogonal to the first plane. A distance from the center point to a first edge is shorter than a distance from the center point to a second edge.

Magnetic field detection device

A quantum device capable of securing terminals for external connection is provided. A quantum device according to an example embodiment includes a quantum chip, an interposeron which the quantum chipis mounted, and a socketdisposed so as to be opposed to the interposer, the socketcomprising a movable pinand a housingsupporting the movable pin, in which at least one end of the movable pin, which includes the one end and the other end opposite to the one end, is movable relative to the housing, the one end being in electrical contact with a terminal of the interposer, and the other end is in an electrical contact with a terminal of a boardon which a connectoris formed, the connectorbeing configured to serve as an external input/output.

Quantum device

A quantum device capable of improving a cooling effect while securing the number of terminals is provided. A quantum device according to an example embodiment includes a quantum chip, and an interposeron which the quantum chipis mounted, in which the interposerincludes a conductive wiring line CLelectrically connected to the quantum chip, and a metal filmdisposed in a part of the interposerthat is in contact with a sample stagehaving a cooling function, and a mounting surfaceof the interposeron which the quantum chipis mounted or an opposite surfaceopposite to the mounting surfaceincludes a first area ARand a second area ARdifferent from the first area ARas viewed in a direction perpendicular to the mounting surfaceor the opposite surface

Quantum device having quantum chip on interposer in contact with sample stage

A quantum device () includes: an interposer (); a quantum chip (); a first connection part () that is provided between the interposer () and the quantum chip () and electrically connects a wiring layer of the interposer () to a wiring layer of the quantum chip (); and a second connection part () that is provided on a main surface of the interposer () where the first connection part () is arranged and is connected to a cooling plate ().

Quantum device and method of manufacturing the same

A quantum device according to an example embodiment includes a quantum chip, and an interposeron which the quantum chipis mounted, in which the interposerincludes a conductive wiring line CLelectrically connected to the quantum chip, a mounting surfaceof the interposeron which the quantum chipis mounted or an opposite surfaceopposite to the mounting surfaceincludes a first area ARand a second area ARdifferent from the first area ARas viewed in a direction perpendicular to the mounting surfaceor the opposite surface, the conductive wiring line CLis disposed in the first area ARon the mounting surfaceor the opposite surface, and a movable memberis in contact with the second area ARof the interposer

A quantum device () includes an interposer (), a quantum chip () mounted on the interposer (), and a shield part () provided so as to surround a quantum circuit region of the interposer () and the quantum chip (). Accordingly, the quantum device () is able to prevent interference in the quantum circuit region due to exogenous noise.

Quantum device including shield part and method of manufacturing the same

A quantum device () includes: an interposer (); a quantum chip (); and a connection part () that is provided between the interposer () and the quantum chip () and electrically connects a wiring layer of the interposer () to a wiring layer of the quantum chip (), in which the connection part () includes: a plurality of pillars () arranged on a main surface of the interposer (); and a metal film () provided on a surface of the plurality of pillars () in such a way that it contacts the wiring layer of the quantum chip () and the thickness of the metal film at outer peripheral parts of the tip of each of the plurality of pillars () becomes larger than the thickness of the metal film at a center part of the tip of each of the plurality of pillars ().

A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements are a plurality of layers of multilayer body including free layers where their magnetization directions vary due to the external magnetic field. Shapes of the first and second magnetoresistive effect elements viewed from the upper side in the lamination direction are different from each other. The first magnetoresistive effect element has a shape that can increase a slope of an output of the first magnetoresistive effect element relative to the change of the external magnetic field. The second magnetoresistive effect element has a shape that can decrease a slope of an output of the second magnetoresistive effect element relative to the change of the external magnetic field compared to the slope of the output of the first magnetoresistive effect element.

Magnetic sensor and magnetic encoder

A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42&#xb0; or less relative to the first plane.

Magneto-resistive effect element

A current sensor includes a magnetic sensor device. The magnetic sensor device includes a magnetic sensor, a first magnetic layer, and a second magnetic layer in non-contact with the first magnetic layer. The magnetic sensor, the first magnetic layer, and the second magnetic layer are disposed across a virtual straight line and arranged in this order in a direction parallel to the virtual straight line. Different portions of magnetic flux generated by a current to be detected pass through the magnetic sensor, the first magnetic layer, and the second magnetic layer.

Magnetic sensor device and current sensor

Growing community of inventors

Tokyo, Japan

Suguru Watanabe