Fujitsu Corporation

Taiyo Yuden Co., Ltd.

Fujitsu Media Devices Limited

Suguru Warashina

Takashi Matsuda

Masanori Ueda

Osamu Kawachi

Michio Miura

Kazunori Inoue

Shogo Inoue

Osamu Tsuboi

Yoshio Satoh

Osamu Ikata

Satoru Matsuda

Hiroshi Ishikawa

Tsutomu Miyashita

Yasufumi Kaneda

Atsushi Machida

A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes, first pads connected thereto, and a first film are provided. The first film is located so as to surround the comb-like electrodes. A base substrate has a second surface on which second pads joined to the first pads and a second film joined to the first film are provided. The first and second films joined by a surface activation process define a cavity in which the comb-like electrodes and the first and second pads are hermetically sealed.

Surface acoustic wave device and method of fabricating the same

An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.

Acoustic wave device, duplexer, communication module, communication apparatus, and manufacturing method for acoustic wave device

An acoustic wave element includes: resonatorseach including an electrode to excite acoustic waves; a power supply wiring portionthat is disposed so as to connect the resonatorselectrically; a piezoelectric substrateon which the resonatorsand the power supply wiring portionare formed; a second mediumthat is formed on the piezoelectric substrateso as to cover the resonators; and a third mediumthat is formed on the piezoelectric substrateso as to cover at least the second mediumand the power supply wiring portion. A side surfaceof the power supply wiring portionthat is in contact with a surface of the piezoelectric substrateforms an obtuse first angle &#x3b8; with respect to the surfaceof the piezoelectric substrate

Acoustic wave element, duplexer, communication module, and communication apparatus

An elastic wave device is described which includes a piezoelectric substrate, comb-shaped electrodes having teeth electrodes that are disposed so as to face each other on the piezoelectric substrate, a non-overlapping area in which the teeth electrodes of the comb-shaped electrodes do not overlap each other, and a overlapping area in which the teeth electrodes overlap each other and the velocity of sound is higher than that in the non-overlapping area.

Elastic wave device with a dielectric layer on the comb-shaped electrodes

An acoustic wave device of the present application includes a piezoelectric substrate (), interdigital transducer electrodes () formed on the piezoelectric substrate (), and an SiOfilm () formed so as to cover the electrodes (). The acoustic wave device also includes a displacement adjustment film () formed on the SiOfilm (), and the displacement adjustment film () is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiOfilm (). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.

Planar surface acoustic wave device, communication module, and communication apparatus

A package substrate includes signal pads provided on a main surface of the package substrate, footpads provided on a backside of the package substrate, and a sealing electrode provided on the main surface to surround the signal pads, the signal pads being electrically coupled to the footpads, the sealing electrode being insulated from the footpads.

Downsized package for electric wave device

A surface acoustic wave device includes, a first substrate, a surface acoustic wave chip attached to the first substrate, and a second substrate that hermetically seals the surface acoustic wave chip. At least one of the first and second substrates includes. The first and second substrates have respective joining surfaces. An electric circuit is formed on a surface area of the first substrate other than the joining surfaces.

An angular velocity sensor is provided that includes a frame, an oscillator and torsion bars that connect the oscillator to the frame. The frame, the oscillator and the torsion bar are formed integral with each other by etching a material substrate in the thickness direction of the substrate. The oscillator, configured in the form of an H, includes a support, two first arms and two second arms. These arms extend from the support in an arm-extending direction perpendicular to the thickness direction of the substrate. The oscillator includes a mounting surface that is provided with a piezoelectric driver for generating in-plane oscillation of the oscillator, and with a piezoelectric detector for detecting out-of-plane oscillation of the oscillator.

Angular velocity sensor

The present invention relates to a method of manufacturing a semiconductor device for forming an insulated gate field effect transistor in a completely isolated SOI layer, and has for its object to prevent depletion or inversion surely by introducing impurities of sufficiently high concentration into an SOI layer adjacent to an isolating film filled up between element regions of the SOI layer and a backing insulating layer and to aim at flattening of the SOI substrate surface, and further, includes the steps of implanting impurity ions into a semiconductor layer from an oblique direction so as to reach the semiconductor layer under an oxidation-preventive mask using the oxidation-preventive mask as a mask for ion implantation, heating the semiconductor layer in an oxidizing atmosphere with the oxidation-preventive mask so as to form a local oxide film to isolate the semiconductor layer, and also forming a impurity region with impurities implanted into the semiconductor layer in a region adjacent to the local oxide film and to at least an insulating layer under the semiconductor layer.

Growing community of inventors

Kawasaki, Japan

Suguru Warashina