Nissan Chemical Corporation

Nissan Chemical Industries Limited

Suguru Sassa

Tomoya Ohashi

Shuhei Shigaki

Hiroki Yamaguchi

Toyoshiro Yoshida

Takumi Oya

A method for manufacturing a wafer having a functional film, with an outer peripheral part of a top face of the wafer annularly exposed, the method including: spin-coating a high-viscosity coating material that contains a functional film constituent over the top face of the wafer to form a coating film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer and kept rotated to remove the coating film on the outer peripheral part of the top face of the wafer; subsequently, heating the coating film on the wafer to form a fluidity suppressed film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer having the fluidity suppressed film and kept rotated to remove the fluidity suppressed film on the top face of the wafer; and subsequently, heating the fluidity suppressed film on the wafer.

Method for manufacturing wafer having functional film

A method for producing an ion-exchange resin having a water content of 5% by weight or less, a method for producing a lithography coating film forming-composition using the ion-exchange resin, and a method for washing the ion-exchange resin. The methods include the step of passing an organic solvent having a water content of 150 ppm or less through an ion-exchange resin precursor having a water content of 40% by weight or more, where a dehydration efficiency defined by the following equation is 5 or more: Dehydration efficiency=Dehydration rate (%)/[Weight of the organic solvent used per unit weight of the ion-exchange resin precursor (kg/kg)×Washing time (h)].

Method for producing a lithography coating film forming-composition

A method for producing a coating film-forming composition for lithography, including a step for passing a liquid through a filter cartridge. The filter cartridge is obtained by layering more than one type of filtration base fabrics or winding same around a hollow inner tube, wherein: the fabrics are non-woven fabrics in which metal-adsorbing groups are chemically bonded to polyolefin fibers; the fabrics contain non-woven fabric layers A and B; layer A is configured from polyolefin fibers to which sulfonic acid groups are chemically bonded as metal-adsorbing groups; and layer B is configured from polyolefin fibers to which at least one type selected from among amino groups, N-methyl-D-glucamine groups, iminodiacetic acid groups, iminodiethanol groups, amidoxime groups, phosphoric acid groups, carboxylic acid groups and ethylenediamine triacetic acid groups chemically bonded as metal-adsorbing groups. Thus, the amount of metal impurities that are the cause of minute defects on a wafer can be reduced.

Method for producing coating film-forming composition for lithography

There is provided a cleaning fluid that effectively removes metal impurities and the like existing on a portion through which a chemical solution for lithography passes, before causing the chemical solution to pass through a semiconductor manufacturing equipment in a lithography process, in order to prevent defects caused by the metal impurities and the like found on a semiconductor substrate after forming a resist pattern or after processing a semiconductor substrate in a process for manufacturing semiconductor device. A cleaning fluid to clean a portion through which a chemical solution for lithography passes in a semiconductor manufacturing equipment used in a lithography process for manufacturing semiconductors, including: an inorganic acid; water; and a hydrophilic organic solvent. In the cleaning fluid, the concentration of the inorganic acid is preferably 0.0001% by mass to 60% by mass based on a total mass of the cleaning fluid.

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Toyama, Japan

Suguru Sassa