Oki Electric Industry Co., Ltd.

Rigaku Corporation

Suguru Sasaki

Satoshi Machida

Takashi Taguchi

Minoru Watanabe

Koichiro Ito

Shoichi Yasukawa

Noboru Uchida

A structure for battery analysis of the present invention includes a pressurizing unit () having a pressurizing mechanism, and a pressure receiving unit () for receiving pressure acting on a sample battery (S), and pressurizes the sample battery (S) accommodated in a hollow portion of a battery accommodation unit () between the pressurizing unit () and the pressure receiving unit () to suppress expansion and contraction of the sample battery (S).

Structure for battery analysis and X-ray diffraction device

X-ray residual stress measuring instrument

A mask pattern correcting method is comprised of a before-correction pattern edge defining step for defining an edge of a mask pattern, a deviated position setting step for setting a close point and a isolated point based on the deviation between the pattern edges of the mask pattern and the design pattern, an edge selecting step for correcting an edge located within specified distance from the isolated point, and selecting a mask pattern edge that will have smaller variation of the close point light intensity and larger variation of isolated point light intensity by the correction, a correcting step for correcting an edge to be corrected such that the isolated point light intensity after correction satisfies a criterion for correction, an after-correction pattern edge defining step for defining a pattern edge of the corrected mask pattern, and an end determining step for ending correction when the deviation between the defined after-correction pattern edge and the edge of the design pattern is within a specified criteria for determining ending correction.

Method of correcting mask pattern

A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.

Linear grating formation method

A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)&#x3bb;/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as &#x3bb;, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.

Semiconductor device and semiconductor wafer

In a method of optimizing a shape of an aperture, an effective light source is divided into a plurality of minute areas having same shape and size. One point light source is provided at a center of each of the divided minute areas. A normalized image light intensity slope on a wafer is obtained in consideration of a focus variation of a projection aligner for a plurality of patterns at each of the point light sources. The normalized image light intensity slope of a light intensity is used as an index. The image light intensity slope is related to an exposure amount variation of the projection aligner by one dimensional function. A common opening is selected for the shape of the aperture that is optimized for each of the patterns. The common opening is made into an optimum shape of the aperture for the patterns.

Optimization method of aperture type of projection aligner

A process for forming a pattern according to the invention comprises steps of disposing a mask on a surface of a substrate, and irradiating a resist film with a first energy beam through the mask, forming a first resist pattern by developing the resist film after applying the first energy beam, irradiating the first resist pattern with a second energy beam without through the mask, forming a second resist pattern smaller than the first resist pattern by subjecting the first resist pattern to heat treatment after applying the second energy beam, and patterning the workpiece film by use of the second resist pattern as a mask. As a result, it is possible to provide a process for forming the resist pattern formed on the substrate which can be miniaturized with highly accurate control of size with ease beyond a resolution limit imposed by photolithographic techniques.

Growing community of inventors

Tokyo, Japan

Suguru Sasaki