Renesas Electronics Corporation

Nec Electronics Corporation

Suguru Sasaki

Youhei Kawahara

Kenta Kobayashi

Yusuke Sugawara

A semiconductor device generates battery state information including information of a capacity that can be extracted from a battery in the case of discharging from a full charge state until a discharge cutoff voltage at a predetermined discharge rate, based on measurement results of battery voltage, current, and temperature. The device calculates a first estimate value of capacity that can be extracted in the case of discharging the battery from the full charge state until the discharge cutoff voltage and calculates a second estimate value of capacity that can be extracted in the case of discharging the battery until a voltage larger than the discharge cutoff voltage. The device corrects the first estimate value based on a difference between a capacity value extracted from the battery by discharging the battery from the full charge state until the voltage larger than the discharge cutoff voltage and the second estimate value.

Semiconductor device, battery pack, and electronic device

A semiconductor device includes a base film, a semiconductor chip mounted on the base film, and a plurality of leads formed on the base film, each of the leads including one end coupled to the semiconductor chip and another end being opposite to the one end. The another end of a first one of the leads and the another end of a second one of the leads are located at different positions respectively between the semiconductor chip and a cut line along which the base film is cut.

TCP-type semiconductor device and method of testing thereof

A TCP type semiconductor device, which is connected to a plurality of substrate-side electrodes parallel to each other and each having a linear shape, has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connecting between the semiconductor chip and the plurality of substrate-side electrodes, respectively. Each of the plurality of leads has an external terminal section extending in a first direction and configured to come in contact with corresponding one of the plurality of substrate-side electrodes. A part of the external terminal section is a wide section that is formed wider than the other section of the external terminal section A position of the wide section in the first direction is different between adjacent leads of the plurality of leads.

TCP-type semiconductor device

A TCP-type semiconductor device has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film. Each lead has: a first terminal portion including a first end that is one end of the each lead and connected to the semiconductor chip; and a second terminal portion including a second end that is the other end of the each lead and located on the opposite side of the first terminal portion. I a terminal region including the second terminal portion of the each lead, the plurality of leads are parallel to each other along a first direction, the plurality of leads include a first lead and a second lead that are adjacent to each other, and the first lead and the second lead are different in a position of the second end in the first direction.

A method for a burn-in test includes steps (a) and (b). In the step (a), an operation test of a first semiconductor device is executed through first probes provided on a probe card. In the step (b), a stress is applied to a second semiconductor device through second probes provided on the probe card while the operation test is executed.

Growing community of inventors

Kanagawa, Japan

Suguru Sasaki