Ebara Corporation

Semiconductor Energy Laboratory Co., Ltd.

Suguru Ozawa

Yoichi Nakagawa

Toshifumi Watanabe

Yuji Araki

Tao Xu

Kei Takahashi

Atsuo Isobe

Satoshi Murakami

Junpei Momo

Takashi Hamada

Takayuki Saito

Tetsuya Kakehata

Minoru Harada

Toshio Yokoyama

Hiroaki Honda

Ryoichi Shinjo

Takashi Shingu

Risa Kimura

Kenichi Sasaki

Keiichi Murakawa

Kazuhide Shimamura

Muneto Takahashi

A gas solution supply deviceincludes: a first gas-liquid separatorin which gas solution is stored; a second gas-liquid separatorprovided at a stage subsequent to the first gas-liquid separatorand in which gas solution to be supplied to a use point is stored; an intermediate lineprovided between the first gas-liquid separatorand the second gas-liquid separator; a pressure booster pumpprovided on the intermediate lineand increases a pressure of gas solution being supplied from the first gas-liquid separatorto the second gas-liquid separator; a gas supply linethat supplies gas as a material of the gas solution; and a gas dissolving unitprovided on the intermediate lineand dissolves the gas supplied from the gas supply linein the gas solution supplied from the first gas-liquid separator

Gas solution supply device

A gas solution manufacturing deviceincludes a gas supply lineconfigured to supply a gas as a raw material of a gas solution, a liquid supply lineconfigured to supply a liquid as a raw material of the gas solution, a gas solution production unitconfigured to mix the gas and the liquid together to produce the gas solution, a gas-liquid separation unitconfigured to perform gas-liquid separation of the produced gas solution into a supplied liquid to be supplied to a use point and a discharged gas to be discharged through an exhaust port, and a gas dissolving unitprovided in the liquid supply lineand configured to dissolve the discharged gas resulting from the gas-liquid separation in the liquid. The gas dissolving unitis configured with a hollow fiber membrane configured with a gas permeable membrane.

Gas solution manufacturing device

A gas dissolved liquid manufacturing device includes: a pump configured to pressurize a liquid; a pipe communicating with the pump; a nozzle disposed in the pipe, the nozzle being configured to generate micro bubbles using a supplied gas; and a gas-liquid separation tank whose upper part communicates with the pipe, the gas-liquid separation tank being configured to separate a gas-liquid mixture generated by the nozzle into a gas and a liquid.

Gas-dissolved liquid manufacturing device

A gas dissolution supply apparatus dissolves a gas supplied from a gas supply unit in a liquid supplied from a liquid supply unit to produce a gas dissolution in a gas dissolving unit, stores the gas dissolution produced in the gas dissolving unit in a gas dissolution tank, supplies the gas dissolution from the gas dissolution tank to a point of use, measures the flow rate of a part of the gas dissolution supplied to the point of use that is returned to the gas dissolving unit, and adjusts the flow rate of the liquid supplied from the liquid supply unit to the gas dissolving unit based on the result of the measurement.

Gas dissolution supply apparatus and gas dissolution supply method

A gas-dissolved liquid producing apparatusincludes a gas supply unit, a first liquid supply unit, a gas-dissolved liquid generator, a second liquid generator, a second liquid supply unit, a flow rate measuring unit, and a controller. The controllercontrols the supply amount of the first liquid to be supplied to the gas-dissolved liquid generatoraccording to the flow rate of circulated gas-dissolved liquid measured by the flow rate measuring unit. The gas-dissolved liquid generatordissolves gas supplied from the gas supply unitin first liquid supplied from the first liquid supply unitand second liquid supplied from the second liquid supply unitto generate gas-dissolved liquid.

Gas-dissolved liquid producing apparatus

Provided is a supply-liquid producing apparatus capable of producing a supply liquid by an amount needed at a use point. A supply-liquid producing apparatus includes a mixer that mixes water and ozone gas to produce ozone water; a booster pump that increases the pressure of the water supplied to the mixer; a gas-liquid separation tank that separates the ozone water produced by the mixer into ozone water to be supplied to a use point and exhaust gas to be discharged from an exhaust port; a flowmeter that measures the flow rate of the ozone water supplied from the gas-liquid separation tank to the use point; a flow control unit that adjusts the (flow rate of the water supplied to the mixer by controlling the booster pump in response to the flow rate of the ozone water measured by the flowmeter; and an exhaust pressure control unit that controls the exhaust pressure to keep constant the water level in the gas-liquid separation tank.

Supply-liquid producing apparatus and supply-liquid producing method

After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

Method of manufacturing semiconductor device

An object is to provide a system-on-panel display device including a display portion and a peripheral circuit for controlling display on the display portion over one substrate, which can operate more accurately. The display device has a display portion provided with a pixel portion including a plurality of pixels and a peripheral circuit portion for controlling display on the display portion, which are provided over a substrate. Each of the display portion and the peripheral circuit portion includes a plurality of transistors. For semiconductor layers of the transistors, single crystal semiconductor materials are used.

Display device and method for manufacturing thereof

To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is suppressed. The fabricating method includes the steps of forming an island-shape semiconductor film; doping the island-shape semiconductor film with a first impurity element to form a first impurity region; forming an insulating film so as to cover the island-shape semiconductor film; etching the insulating film to form a first opening and a second opening that partly expose the first impurity region; forming a mask over the insulating film so as to cover the first opening and expose the second opening; doping the first impurity region with a second impurity element to form a second impurity region; and forming a first wiring in contact with the first impurity region exposed at the first opening, and forming a second wiring in contact with the second impurity region exposed at the second opening. Since the second impurity element is added through the second opening, the periphery of the second opening is also doped with a slight amount of the second impurity element. Therefore, the first impurity region and the second wiring are located away a short distance from each other such that they are not shorted.

Method of fabricating semiconductor device

A gas dissolved water producing apparatus includes a gas dissolving section, a gas channel for guiding a gas into the dissolving section, a first water channel for guiding water into the dissolving section, a gas dissolved water discharge channel, and a second water channel for guiding the water without passing through the dissolving section. The second water channel joins the gas dissolved water discharge channel to control the solution gas dissolved in the gas dissolved water can be controlled to a prescribed level of concentration.

Growing community of inventors

Tokyo, Japan

Suguru Ozawa