Hitachi Chemical Company, Ltd.

The University of Tokyo

Waseda University

Zeon Corporation

Japan Science and Technology Agency

Dainippon Screen Mfg. Co., Ltd.

Canon Anelva Corporation

Meidensha Corporation

Meijo Nano Carbon Co., Ltd.

Sino-japan Electric Heater Co., Ltd.

Suguru Noda

Eisuke Haba

Dong Young Kim

Hisashi Sugime

Toshio Osawa

Shunsuke Ueda

Zhongming Chen

Kei Hasegawa

Yukio Yamaguchi

Takayoshi Hongo

Toshimasa Fukai

Daizo Takahashi

Yuichi Nishikiori

Hayato Ochi

Rena Takahashi

Koji Furuichi

Yusuke Kon

Kotaro Yasui

Kazunori Kakehi

Soichiro Takano

Satoshi Takashima

Kosuke Kawabata

Soichiro Hachiya

Sae Kitagawa

Yuta Hashizume

Rongbin Xie

Katsuya Namiki

Zihao Zhang

Tomotaro Mae

Keisuke Hori

Provided are a carbon nanotube production device and production method capable of realizing high-temperature heating of a catalyst raw material in a floating catalyst chemical vapor deposition (FCCVD) method, and improving the quality and yield of carbon nanotubes synthesized. A carbon nanotube production deviceincludes a synthesis furnacefor synthesizing carbon nanotubes; a catalyst raw material supplying nozzlefor supplying a catalyst raw material used to synthesize carbon nanotubes to the synthesis furnace; and a nozzle temperature adjusting unitcapable of setting a temperature of an inner portionof the catalyst raw material supplying nozzlehigher than a temperature of a reaction fieldof the synthesis furnace. By supplying to the synthesis furnacethe catalyst raw material that has been thermally decomposed after being heated to a temperate at which a catalyst metal will not yet be condensed, and by having the thermally decomposed catalyst raw material rapidly cooled to a CVD temperature at the synthesis furnace, microscopic catalyst metal particles will be generated at a high density in the space of the reaction fieldsuch that carbon nanotubes having a small diameter can be vapor-grown at a high density.

Manufacturing apparatus and manufacturing method for carbon nanotube

A secondary battery negative electrode according to the invention includes: a three-dimensional current collector formed of a self-supporting sponge-like structure of carbon nanotubes; a metal active material contained inside the three-dimensional current collector; and a plurality of seed particles contained inside the three-dimensional current collector and made of a material different from the metal active material, in which the secondary battery negative electrode does not include a foil of the metal active material.

Secondary battery negative electrode, secondary battery, and manufacturing method of secondary battery negative electrode

Provided is a conductive material that is capable of achieving a high-electric conductivity, long-term stability under an atmospheric environment, heat and humidity stabilities, as well as a conductive film and a solar cell using the same. The conductive material includes a mixture of carbon nanotubes (CNTs) and polystyrene sulfonic acid (PSS acid). The element ratio (S/C ratio) of sulfur (S) to carbon (C) in the mixture may be from 0.001 to 0.1 in terms of the number of atoms. CNTs and PSS acid may make up a content percentage of 10 wt % or more in the mixture. These conductive films comprised of the conductive materialmay have a weight per unit area of the CNTs in the range from 1 mg/mto 10000 mg/m. The solar cell may include the conductive film, wherein the film is on the surface of a semiconductor.

Conductive material, and conductive film and solar cell using same

It is a CNT device () (carbon-metal structure) equipped with a carbon nanotube layer () (CNT layer; same hereafter) on a metal pedestal (). The metal pedestal () is brazed to the CNT layer () with a brazing material layer () interposed therebetween. When manufacturing the CNT device (), firstly, the CNT layer () is formed on a heat-resistant textured substrate (). Next, the metal pedestal () is brazed to the CNT layer () that is on the heat-resistant textured substrate () with the brazing material layer () interposed therebetween. Then, the metal pedestal () (and the CNT layer) is peeled off the heat-resistant textured substrate () to transfer the CNT layer () from the heat-resistant textured substrate () to the metal pedestal ().

Carbon-metal structure and method for manufacturing carbon-metal structure

A supported catalyst comprises: a support that is particulate; and a composite layer laminate formed outside the support and including two or more composite layers, wherein each of the composite layers includes a catalyst portion containing a catalyst and a metal compound portion containing a metal compound, the support contains 10 mass % or more of each of Al and Si, and a volume-average particle diameter of the support is 50 &#x3bc;m or more and 400 &#x3bc;m or less.

Supported catalyst and method of producing fibrous carbon nanostructures

A secondary battery includes an electrode structure, the electrode structure includes a positive electrode changing in volume by expansion or contraction during discharging or charging, and a negative electrode changing in volume in a reverse way to the positive. The positive electrode and the negative electrode have a volume ratio of 1.1 or more, the volume ratio being a value obtained by dividing the volume under expansion by the volume under contraction, and the positive electrode or the negative electrode has the volume ratio of 1.9 or more, and has a total volume ratio of 1.2 or less, the total value ratio being a value obtained by dividing a larger value by a smaller value with respect to a total volume of the positive electrode and the negative electrode in a discharged state and a total volume of the positive electrode and the negative electrode in a charged state.

Secondary battery

A method of producing fibrous carbon nanostructures uses a fluidized bed process, and comprises supplying a source gas to a reaction site in which a supported catalyst having a particulate carrier and a catalyst supported on a surface of the carrier is fluidizing, to form fibrous carbon nanostructures on the catalyst of the supported catalyst, wherein the source gas contains a double bond-containing hydrocarbon and carbon dioxide, and a content of the carbon dioxide is 0.3 vol % or more with respect to a total volume of the source gas.

Method of producing fibrous carbon nanostructures

A method for simultaneously producing carbon nanotubes and hydrogen according to the present invention is a method for simultaneously producing carbon nanotubes and hydrogen, in which using a carbon source containing carbon atoms and hydrogen atoms and being decomposed in a heated state, and a catalyst for producing carbon nanotubes and Hfrom the carbon source, the above carbon nanotubes are synthesized on a support in a heated state, placed in a reactor, and simultaneously, the above His synthesized from the above carbon source, the method comprising a synthesis step of flowing a source gas comprising the above carbon source over the above support, on which the above catalyst is supported, to synthesize the above carbon nanotubes on the above support and simultaneously synthesize the above Hin a gas flow.

Device for simultaneously producing carbon nanotubes and hydrogen

A heat exchanger type reaction tube includes a first tube part that forms a first flow channel into which a feed gas flows and in which the feed gas moves down; a second tube part that forms a second flow channel which is connected to the first flow channel and in which the feed gas moves up and that has a granular catalyst carrying support medium charged therein; and a heating device that heats the first tube part and the second tube part. Then, the first flow channel and the second flow channel are adjacent to each other while being separated from each other by a partition wall, and the second flow channel is provided with a distributor which holds the catalyst carrying support medium and through which the feed gas passes.

Heat exchanger type reaction tube

The present invention relates to metal catalyst particles for carbon nanotube synthesis, comprising carbon-containing regions on their surfaces.

Carbon-containing metal catalyst particles for carbon nanotube synthesis and method of producing the same, catalyst carrier support, and method of producing carbon nanotubes

The present invention relates to a method of producing carbon nanotubes, comprising a catalyst particle forming step of heating and reducing a catalyst raw material to form catalyst particles and a carbon nanotube synthesizing step of flowing a raw material gas onto the heated catalyst particles to synthesize carbon nanotubes, wherein a carbon-containing compound gas without an unsaturated bond is flowed onto the catalyst raw material and/or the catalyst particles in at least one of the catalyst particle forming step and the carbon nanotube synthesizing step.

Carbon nanotubes and production method thereof

The present invention provides a carbon nanomaterial production apparatusthat includes a reaction tubeinto which raw material gas and carrier gas are supplied and accordingly in which carbon nanomaterial is grown, a connection tubethat is connected to the reaction tubeand through which an aerosol-like mixture of the carbon nanomaterial and the carrier gas passes, and a collection tubethat is connected to the connection tubeand collects the carbon nanomaterial from the mixture. The collection tubeincludes a discharge sectionthat is located above a junctionwith the connection tubeand discharges the carrier gas contained in the mixture to outside, and a trapping sectionthat is located below the junctionwith the connection tubeand traps the carbon nanomaterial that is separated from the mixture by gravitational sedimentation.

Apparatus for producing nanocarbon material and method for producing nanocarbon material

The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate)is prepared, and on this monocrystalline silicon substrate, an epitaxial sacrificial layeris formed. Subsequently, on this sacrificial layer, a monocrystalline silicon thin filmis rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer, whereby a monocrystalline silicon thin filmused as a photovoltaic layer of solar cells is formed.

Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby

The present invention relates to a method for producing carbon nanotubes, comprising a synthesis step of synthesizing carbon nanotubes on a support on which a catalyst is supported by flowing a source gas consisting of acetylene, carbon dioxide, and an inert gas over the support, wherein in the source gas, a partial pressure of the acetylene is 1.33&#xd7;10to 1.33&#xd7;10Pa, a partial pressure of the carbon dioxide is 1.33&#xd7;10to 1.33&#xd7;10Pa, and a partial pressure ratio of the acetylene to the carbon dioxide (acetylene/carbon dioxide) is in the range of 0.1 to 10.

Process for production of carbon nanotube

The method for producing carbon nanotubes employs a carbon source that contains carbon and is decomposed when heated and a catalyst on a support that serves as a catalyst for production of carbon nanotubes from the carbon source. The method includes a catalyst loading step in which the catalyst starting material is distributed over the support to load the catalyst onto the support, a synthesis step in which the carbon nanotubes are synthesized on the support, and a separating step in which a separating gas stream is distributed over the support to separate the carbon nanotubes from the support, wherein the catalyst loading step, the synthesis step and the separating step are carried out while keeping the support in a heated state and switching supply of the catalyst starting material, the carbon source and the separating gas stream.

Growing community of inventors

Tokyo, Japan

Suguru Noda