Sony Semiconductor Solutions Corporation

Suguru Moriyama

Kenju Nishikido

Kosuke Ozaki

Variations in photoelectric conversion performance between pixels (valid pixels and light-shielding pixels) in an imaging element are reduced. A solid-state imaging element includes: a plurality of pixels including a color filter for transmitting a light having a predetermined wavelength among incident lights, a photoelectric conversion portion formed on a semiconductor substrate and for performing photoelectric conversion in accordance with a light transmitted through the color filter, and an insulating layer placed between the color filter and the semiconductor substrate; light-shielding pixels among the plurality of pixels, including a first light-shielding portion disposed in a vicinity of the color filter on the insulating layer and for shielding the light transmitted through the color filter in its own pixel; and a second light-shielding portion disposed on the insulating layer between the plurality of pixels and the light-shielding pixels, and for shielding a light transmitted through the color filter of the adjacent pixel.

Solid-state imaging element and imaging apparatus

A process of manufacturing an imaging element is simplified. The imaging element includes a polarization pixel and a phase difference pixel. The polarization pixel included in the imaging element includes a polarizer transmitting incident light having a specific polarization direction and generates an image signal based on the incident light being from a subject and being transmitted through the polarizer. The phase difference pixel included in the imaging element includes a light shielding film being formed simultaneously with the polarizer and being disposed to be shifted in a predetermined pupil-division direction for pupil-dividing the incident light from the subject and generates an image signal for detecting a phase difference.

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Kumamoto, Japan

Suguru Moriyama