Shin-etsu Handotai Co., Ltd.

Suguru Matsumoto

Izumi Fusegawa

Ryoji Hoshi

Susumu Sonokawa

Hiroyuki Kamada

Katsuhiko Miki

Toshiharu Uesugi

Akihiro Kimura

Takashi Mori

Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.

Quartz glass crucible, method for producing the same, and method for producing silicon single crystal

The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.

Single-crystal manufacturing method and single-crystal manufacturing apparatus

The present invention provides a method for evaluating silicon single crystal wherein an amount &#x394;[C] of carriers generated due to oxygen donors produced when a heat treatment is performed to the silicon single crystal is calculated and evaluated, the amount &#x394;[C] being calculated from oxygen concentration [Oi] in the silicon single crystal, a temperature T of the heat treatment, a time t of the heat treatment, and an oxygen diffusion coefficient D(T) at the temperature T by using the following relational expression:&#x394;[C]=&#x3b1;[Oi]&#xd7;exp(&#x2212;&#x3b2;&#xb7;D(T)&#xb7;[Oi]&#xb7;t)

Method for evaluating silicon single crystal and method for manufacturing silicon single crystal

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Nishishirakawa-gun, Japan

Suguru Matsumoto