The Furukawa Electric Co., Ltd.

Suguru Imai

Keishi Takaki

Norihiro Iwai

Hitoshi Shimizu

Naoki Tsukiji

Yasumasa Kawakita

Masaki Funabashi

Takeo Kageyama

Hirotatsu Ishii

Toshihito Suzuki

Tomofumi Kise

Kinuka Tanabe

Hitoshzi Shimizu

A surface-emitting laser apparatus includes: a surface-emitting laser element; and a driving apparatus supplying a modulation-driving current to the surface-emitting laser element. The modulation-driving current is intensity-modulated to vary across a value of a bias current. The number of lateral modes of laser oscillation of the surface-emitting laser element changes from one to three at maximum in accordance with a value of the modulation-driving current. Among changing currents at which number of the lateral modes of the laser oscillation of the surface-emitting laser element changes, if a first changing current is defined at which the number of the lateral mode of the laser oscillation changes from one to two, the driving apparatus supplies the modulation-driving current to the surface-emitting laser element. The modulation-driving current is set so that a value of the first changing current is not between the bias current and a maximum value of the modulation-driving current.

Surface-emitting laser apparatus, optical module, and method of driving surface-emitting laser element

Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.

Vertical light emitting device and manufacturing method

A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.

Semiconductor laser element and manufacturing method thereof

A surface emitting laser apparatus includes an arithmetic processing unit including an I/O unit for externally inputting an instruction and a core unit that performs an operation based on the instruction and outputs a differential voltage signal modulated with a predetermined amplitude according to a result of the operation, capacitors respectively arranged on output paths of the differential voltage signal, and a surface emitting laser device that is directly connected to the arithmetic processing unit via the capacitors. An I/O voltage and a core voltage are externally supplied to the I/O unit and the core unit, respectively. The arithmetic processing unit generates a driving voltage signal by superimposing the differential voltage signal with the core voltage commonly supplied as a bias voltage without stepping up or down the core voltage and without amplifying the differential voltage signal and supplies the driving voltage signal to the surface emitting laser device.

Vertical cavity surface emitting laser apparatus

In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrateis comprised of: a semiconductor lower DBR mirror, a cladding layer, a n-type contact layer, an active layer, an electric current constricting layer, a p-type cladding layer, a p-type contact layer, a phase adjusting layerand a dielectric upper DBR mirror The surface emitting laser should be formed such that the diameter X (&#x3bc;m) of the opening diameter of the previously mentioned electric current constricting layerand diameter Y (&#x3bc;m) of the phase adjusting layer satisfy the following relation: X+1.9&#x3bb;&#x2266;Y&#x2266;X+5.0&#x3bb; (wherein &#x3bb; indicates oscillation wavelength (&#x3bc;m) of the surface emitting laser).

Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array

Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.

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Tokyo, Japan

Suguru Imai