Tokyo Electron Limited

Suguen Lee

Hirofumi Takeguchi

Takahisa Otsuka

Kazuyoshi Shinohara

A substrate processing apparatus includes a holder configured to hold a substrate horizontally; a substrate rotating unit configured to rotate the holder; a nozzle configured to supply a fluid onto a top surface of the substrate; a supply unit configured to supply the fluid to the nozzle; and a moving unit configured to move the nozzle in a diametrical direction of the substrate. The nozzle includes a first nozzle member configured to discharge the fluid and a second nozzle member configured to discharge the fluid in a direction different from a direction in which the first nozzle member discharges the fluid. Discharge lines of the first and the second nozzle members intersect with each other at an intersection point. The supply unit includes a first and a second flow rate controllers configured to respectively control discharge amounts of the first and the second nozzle members independently.

Substrate processing apparatus and substrate processing method

A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

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Koshi, Japan

Suguen Lee