International Business Machines Corporation

Sugirtha Krishnamurthy

Cornelius Brown Peethala

Vimal Kumar Kamineni

Viraj Yashawant Sardesai

Raghuveer Reddy Patlolla

Hari Prasad Amanapu

Embodiments of the invention describe a method of forming an integrated circuit. The method includes forming an active semiconductor device region over a substrate. A first contact structure is formed over the active semiconductor device region, wherein the first contact structure includes a first contact liner material and a first contact body material. A conductive gate structure is formed over the active semiconductor device region, and a first gate cap material is formed on the conductive gate structure. The first contact liner material includes a first etch selectivity responsive to a first etch composition, the first contact body material includes a second etch selectivity responsive to the first etch composition, and the first gate cap material includes a third etch selectivity responsive to the first etch composition. The first etch selectivity is greater than each of the second and third etch selectivies.

Growing community of inventors

Manassas, VA, United States of America

Sugirtha Krishnamurthy