Ngk Insulators, Inc.

Sugio Miyazawa

Akiyoshi Ide

Tatsuro Takagaki

Yasunori Iwasaki

Hirokazu Nakanishi

Michio Asai

Yuji Hori

Tomoyoshi Tai

Tsuneaki Ohashi

Keiichiro Watanabe

Shinzo Hayashi

Masaru Doi

Ryosuke Hattori

Hisanori Yamamoto

Toshio Ohashi

A metal paste is suppled into a through hole of a ceramic substrate and heated to generate a metal porous body. A glass paste is applied on a main surface of the metal porous body while the glass paste is impregnated into open pores of the metal porous body. The glass paste is hardened by heating to form a glass layer on the main surface of the metal porous body and to make the glass paste impregnated into the open pores form glass phases. The glass layer is removed to obtain a connection substrate having a ceramic substrate and through conductors provided in through holes, respectively. The through conductor includes the metal porous body and glass phases.

Method for producing connection substrate

A through conductorprovided in a through hole of a ceramic substrate includes a metal porous body, glass phasesandformed in poresA toD of the metal porous bodyand spacesandin the pores. A ratio of an area of the pores is 5 to 50 percent in a cross section of the through conductor. It is provided that the through conductoris separated into a first partA on a side of the first main surfaceand a second partB on a side of the second main surfacein a direction B of thickness of the ceramic substrate, a ratio of an area of glass phases occupying the pores in the first partA is higher than a ratio of an area of glass phases occupying the pores in the second partB. A ratio of an area of spaces occupying the pores in the first partA is lower than a ratio of an area of the pores occupying the pores in the second partB.

Connection substrate

A connection substrate includes a ceramic substrate with a through hole therein and a through conductor provided in the through hole and having first main surface and a second main surface. The through conductor includes a metal porous body having first open pores communicating with the first main surface, and second open pores communication with the second main surface, first glass phases provided in the first open pores, respectively, second glass phases formed in the second open pores, respectively, first spaces provided in the first open pores, respectively, and second spaces provided in the second open pores, respectively. The first spaces are closed spaces which do not communicate with the first main surface. The second spaces are open spaces communicating with the second main surface.

A handle substrate of a composite substrate for a semiconductor includes a base substrate comprising a polycrystalline material; and an amorphous layer provided over the base substrate, the amorphous layer having chemical resistance and comprising a single component with a high purity.

Handle substrate of composite substrate for semiconductor, and composite substrate for semiconductor

It is provided an insulating substrate including through holesfor conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 &#x3bc;m , and a diameter of the through hole is 20 to 100 &#x3bc;m . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 &#x3bc;m , respectively.

Insulating substrates including through holes

A composite substrateincludes a semiconductor substrateand an insulating support substratethat are laminated together. The support substrateincludes first and second substratesandmade of the same material and bonded together with a strength that allows the first and second substratesandto be separated from each other with a blade. The semiconductor substrateis laminated on a surface of the first substrateopposite a surface thereof bonded to the second substrate

Composite substrate, semiconductor device, and method for manufacturing semiconductor device

A handle substrate is composed of a translucent alumina sintered body containing a sintering aid including at least magnesium. A concentration of magnesium at a bonding face of the handle substrate to a donor substrate is half or less of an average concentration of magnesium of the handle substrate.

Handle substrates of composite substrates for semiconductors

A handle substrate of a composite substrate for a semiconductor is provided. The handle substrate is composed of polycrystalline alumina. The handle substrate includes an outer peripheral edge part with an average grain size of 20 to 55 &#x3bc;m and a central part with an average grain size of 10 to 50 &#x3bc;m. The average grain size of the outer peripheral edge part is 1.1 times or more and 3.0 times or less of that of the central part of the handle substrate.

Handle substrates of composite substrates for semiconductors, and composite substrates for semiconductors

A composite substrateincludes a supporting substrateand a piezoelectric substratewhich are bonded to each other. In this embodiment, the supporting substrateand the piezoelectric substrateare bonded to each other by an adhesive layer. In the composite substrate, since the supporting substrateis composed of a translucent alumina ceramic, alignment is easily performed during FCB compared with the case where the supporting substrate is composed of an opaque ceramic. Furthermore, preferably, the linear transmittance and the total light transmittance from the front of the supporting substratein the visible light range (360 to 750 nm) are 10% or more and 70% or more, respectively.

Composite substrate

It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 &#x3bc;m, and a diameter of the through hole is 20 to 100 &#x3bc;m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 &#x3bc;m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 &#x3bc;m.

A handle substrateis made of a translucent ceramics. An average density of pores having a size of 0.5 to 3.0 &#x3bc;m included in a surface regionA on the side of a bonding faceof the handle substrateis 50 counts/mmor smaller. It is formed a region, whose average density of pores having a size of 0.5 to 3.0 &#x3bc;m is 100 counts/mmor larger, in the handle substrate. The translucent ceramics has an average grain size of 5 to 60 &#x3bc;m.

It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.

Handle substrate, composite substrate for semiconductor, and semiconductor circuit board and method for manufacturing the same

In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrateA orB for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notchA orB in its outer peripheral portion. The notch is formed with an as-sintered surface.

Handle substrate and composite wafer for semiconductor device

A composite substrate for a semiconductor includes a handle substrateand a donor substrate bonded to a surface of the handle substratedirectly or through a bonding layer. The handle substrateis composed of an insulating polycrystalline material, a surfaceof the handle substratehas a microscopic central line average surface roughness Ra of 5 nm or smaller, and recessesare formed on the surface of the handle substrate.

A composite waferincludes a supporting substrateand a semiconductor substratewhich are bonded to each other by direct bonding. The supporting substrateis a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrateat the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrateis 60% or more. The average crystal grain size of the supporting substrateis 10 to 35 &#x3bc;m. The semiconductor substrateis a single crystal silicon substrate. Such a composite waferhas insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.

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Kasugai, Japan

Sugio Miyazawa