Samsung Electronics Co., Ltd.

Sughun Hong

Sangjin Hyun

Hyung-Seok Hong

Hoonjoo Na

Hye-Lan Lee

Hongbae Park

Yugyun Shin

Sangbom Kang

HyeokJun Son

SungKee Han

A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.

Semiconductor device and method of fabricating the same

A semiconductor device including a selectively nitrided gate insulating layer may be fabricated by a method that includes forming a first gate insulating layer on a substrate having a first region and a second region, performing a nitridation process on the first gate insulating layer, removing the first gate insulating layer from at least a portion of the first region to expose at least a portion of the substrate, forming a second gate insulating layer on at least the exposed portion of the first region of the substrate, thermally treating the first and second gate insulating layers in an oxygen atmosphere, forming a high-k dielectric on the first and second gate insulating layers, and forming a metal gate electrode on the high-k dielectric.

Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same

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Yongin-si, South Korea

Sughun Hong