Samsung Electronics Co., Ltd.

Suejin Kim

Heewon Lee

Sangkwon Moon

Hee-Woong Kang

Hyun-Seung Jei

Hyery No

A read reclaim method of a storage device includes detecting, at a cycle of a random number of read operations, the number of error bits within non-selection data stored in each of a plurality of memory blocks. A memory block having the number of detected error bits, with respect to the number of read operations, increasing at a rate greater than a reference rate over one or more cycles of the random number of read operations is selected as a weak block. The number of error bits within non-selection data stored in the weak block is detected at a cycle of a fixed number of read operations. A detection is made of whether the number of error bits detected according to the fixed-number cycle is greater than or equal to a read reclaim reference. The non-selection data is data not requested by a host.

Storage device and read reclaim method thereof

A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.

Operation method of nonvolatile memory system

The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.

Growing community of inventors

Bucheon-si, South Korea

Suejin Kim