Murata Manufacturing Co., Ltd.

Suehiro Kato

Takeshi Nakamura

Hiroshi Nishiyama

Kenji Ando

Atsuo Senda

Toru Kasanami

A process for preventing the oxidation of a copper film formed on a ceramic body, which comprises the steps of forming a copper film on a ceramic body by a dry-plating process, treating the resultant copper film with a deactivating agent comprising at least one volatile hydrocarbon halide monomer by feeding the same into a vacuum chamber of a dry-plating apparatus.

Process for preventing oxidation of copper film on ceramic body

A method of making zinc oxide film comprises the steps of forming a zinc oxide layer on a substrate by carrying out radio-frequency sputtering with a target of zinc oxide, forming a zinc oxide layer on said zinc oxide layer by carrying out reactive, direct-current or radio-frequency sputtering with a target of zinc metal.

Method of preparing zinc oxide film

There is disclosed a sputtering apparatus for the deposition of thin films of a material other than metals on substrates, comprising a pair of opposed electrodes one of which is adapted to mount a substrate, wherein a target of a material other than metals, from which thin-film-forming atoms are ejected by ion-bombardment during sputtering, is mounted on the other electrode, said target comprising at least two target members stacked on one another. This target installation prevents thin films of a material other than metals from contamination resulting from breakage of the target which in turn results from an increase of the film-forming rate or physical properties of the target material.

Sputtering apparatus

A magnetron sputtering apparatus for producing thin films, which comprises at least two spaced apart opposing electrodes, one of the electrodes having a space therein and being used for mounting a target thereon, from which film-forming atoms are ejected by ion-bombardment, the other electrode being used for mounting a substrate thereon, and a magnet arranged in the space of the target mounting electrode, characterized in that the magnet is mounted on a means for adjusting the distance between the target and the magnet, the means for adjusting said distance being provided in the one electrode on which the target is mounted. The magnetron sputtering apparatus of the present invention enables one to adjust the magnetic flux density at the surface of the target by the adjustment of the distance between the target and the magnet, thus making it possible to produce thin films with uniform characteristics, even if the sputtering is repeated many times without exchange of the target.

Magnetron sputtering apparatus

There is disclosed a combination of a target of a material other than metals and one of opposed electrodes of a sputtering apparatus for the deposition of thin films on substrates wherein the target is soldered on the electrodes by a low-melting alloy consisting essentially of a Pb-Sn-Zn alloy and at least one additive selected from the group consisting of Sb, Al, Ti, Si, Cd and Cu. This target installation enables to prevent porous or poor heat-conducting targets from the breakage resulting from the increase of the film-forming rate or physical properties of the target material such as ceramics, glasses, resins and the like.

Growing community of inventors

Nagaokakyo, Japan

Suehiro Kato