Vanguard International Semiconductor Corporation

Sue-Yi Chen

Chien-Hsien Song

Chih-Jen Huang

A lateral diffused semiconductor device is disclosed, including: a substrate; a first isolation and a second isolation comprising at least portions disposed in the substrate to define an active area; a first drift region and a second drift region disposed in the active area, wherein the first drift region is disposed in the second drift region; a gate structure on the substrate; a source region in the first drift region; a drain region in the second drift region; and a ring-shaped field plate on the substrate, wherein the ring-shaped field plate surrounds at least one of the source and the drain region.

Lateral diffused semiconductor device with ring field plate

A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an isolation structure formed in a substrate to define an active region of the substrate. The active region has a field plate region therein. A step gate dielectric structure is formed on the substrate in the field plate region. The step gate dielectric structure includes a first layer of a first dielectric material and a second layer of the dielectric material, laminated vertically to each other. The first and second layers of the first dielectric material are separated from each other by a second dielectric material layer. An etch rate of the second dielectric material layer to an etchant is different from that of the second layer of the first dielectric material. A method for forming a semiconductor device is also disclosed.

Semiconductor device with a step gate dielectric structure

A semiconductor device is disclosed. An isolation structure is formed in a substrate to define an active region of the substrate, wherein the active region has a field plate region. A gate dielectric layer is formed on the substrate outside of the field plate region. A step gate dielectric structure is formed on the substrate corresponding to the field plate region, wherein the step gate dielectric structure has a thickness greater than that of the gate dielectric layer and less than that of the isolation structure. A method for forming a semiconductor device is also disclosed.

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Hsinchu, Taiwan

Sue-Yi Chen