Qualcomm Incorporated

Sudheer Chowdary Gali

Stanley Seungchul Song

Li Hsiang Sun

Hao Liu

Dhaval Sejpal

Dong Ren

Biswa Ranjan Panda

Ramesh Manchana

A substrate tie cell on an IC is provided. The substrate tie cell includes a diffusion region. The diffusion region is a p-type diffusion region on or within a p-type substrate, an n-type diffusion region on or within an n-type well within a p-type substrate, an n-type diffusion region on or within an n-type substrate, or a p-type diffusion region on or within a p-type well within an n-type substrate. The substrate tie cell further includes a plurality of adjacent gate interconnects (n adjacent gate interconnects) extending over the diffusion region, where n&#x2265;4. The diffusion region is configured to be at one of a first voltage or a second voltage, and the gate interconnects are configured to be at an other of the first voltage or the second voltage. In one configuration, the first voltage is a power supply voltage and the second voltage is a ground voltage.

Intertwined well connection and decoupling capacitor layout structure for integrated circuits

Certain aspects are directed to an amplifier. The amplifier generally includes a first transistor having a gate coupled to an input node of the amplifier, a source degeneration circuit, and a second transistor coupled between the source degeneration circuit and a source of the first transistor, a gate of the second transistor being configured to receive a gain control signal from a controller.

Variable gain amplifier with embedded equalization for uniform tuning

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Bengaluru, India

Sudheer Chowdary Gali