Globalfoundries Inc.

Sudharshanan Raghunthathan

Guillaume Bouche

Andy C Wei

A method includes forming a first dielectric layer having at least one conductive feature embedded therein. A first plurality of conductive lines embedded in a second dielectric layer disposed above the first dielectric layer is formed. A first conductive line in the plurality of conductive lines contacts the conductive feature. The first conductive line is etched using a first etch mask to define a conductive via portion and a recessed line portion in the first conductive line. A second plurality of conductive lines embedded in a third dielectric layer disposed above the second dielectric layer is formed. A second conductive line in the second plurality of conductive lines contacts the conductive via portion and the third dielectric layer directly contacts the second dielectric layer.

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Mechanicville, NY, United States of America

Sudharshanan Raghunthathan