Semiconductor Components Industries, LLC

Sudhama C Shastri

David D Marreiro

Gordon M Grivna

Ali Salih

Mingjiao Liu

Peter Austin Burke

Yenting Wen

Earl D Fuchs

Sallie Hose

Der Min Liou

John Michael Parsey, Jr

Umesh Sharma

Phillip Holland

Rong Liu

Steven M Etter

Ryan J Hurley

Mark A Thomas

Li Jiang

Francine Y Robb

Harry Yue Gee

David M Heminger

Thomas Keena

Wenjiang Zeng

Keith G Kamekona

Ki Chang

Emily M Linehan

Irene S Wan

Wang-Chang Albert Gu

Weizhong Cai

Bladimiro Ruiz, Jr

Stefan Gueorguiev

Guy E Averett

Richard D Moyers

Gordon L Bratten

A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.

Method for manufacturing a semiconductor device

In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.

Method of forming a semiconductor device and structure therefor

A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Method of manufacturing a semiconductor component and structure

A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes one or more transient voltage suppression structures. In an embodiment, the semiconductor component may include an over-voltage detection circuit, an over-current detection circuit, an over-temperature detection circuit, an ESD protection circuit, or combinations of these circuits.

Semiconductor component and method

A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Method for manufacturing a semiconductor component that includes a common mode choke and structure

In one embodiment, electrostatic discharge (ESD) devices are disclosed.

Electrostatic discharge devices and method of making the same

A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.

In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.

Low clamp voltage ESD method

In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.

Method of forming a high capacitance diode

In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.

Integrated semiconductor device

Method of forming a high capacitance diode and structure therefor

A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Semiconductor component and method of manufacture

Method of forming an integrated semiconductor device and structure therefor

Low clamp voltage ESD device and method therefor

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Phoenix, AZ, United States of America

Sudhama C Shastri