Texas Instruments Corporation

Sudesh Chandra Srivastava

Saket Jalan

Vivek Singhal

Mohammed Nabeel

In described examples, an apparatus includes: a set of control registers containing control bits for controlling circuitry coupled to receive register write enable signals and to receive input data; a memory for storing data corresponding to the control bits coupled to receive an address and a memory write enable signal; decode circuitry coupled to output the register write enable signals; a data output bus coupled to receive data from the memory but free from connections to the control registers; and a controller coupled to receive an address, coupled to output the address on an internal address bus, coupled to output a register write enable signal, and coupled to output the memory write enable signal, configured to cause data to be written to a selected control register corresponding to the address received, and to cause the data to be contemporaneously stored at a memory location corresponding to the address received.

Methods and apparatus for reduced area control register circuit

An integrated circuit device having a p-well plane, a plurality of substantially parallel n-well rows, and a logic cell. The p-well plane is comprised of p-type semiconductor material. Each n-well row comprises an n-type layer disposed on the surface of the p-well plane. The plurality of n-well rows includes a first n-well row and a second n-well row. The logic cell is arranged on the p-well plane and the footprint of the logic cell encompasses both the first and second n-well rows.

Area-optimized retention flop implementation

A circuit for reducing gate leakage current in a switchable power domain of a CMOS (complementary metal oxide semiconductor) integrated circuit chip includes a first transistor having a drain electrode coupled to a first terminal of a power switch having a second terminal coupled to a first reference voltage, the first transistor having a gate electrode, a body electrode, and a source electrode. The source electrode and body electrodes are coupled to a second reference voltage. The first transistor has a relatively high first gate leakage current that flows from its gate electrode to its body electrode if the power switch is open and a voltage of the gate electrode of the first transistor representing a first logic level exceeds a voltage of the body electrode by more than a first predetermined amount. A first circuit produces a relatively low voltage on the gate electrode of the first transistor representing a second logic level to substantially reduce the first gate leakage current when reduced power consumption of the chip is needed.

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Sudesh Chandra Srivastava