Leonardo UK Limited

Selex Es Gmbh

Selex Galileo Limited

Sudesh Bains

Christopher Jones

Les Hipwood

Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

Dual band photodiode element and method of making the same

A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate having CMT deposited thereon by MOVPE. The CMT deposited comprises a number of layers of differing composition, the composition being controlled during the MOVPE process and being dependent on the thickness of the layer deposited. Other layers are positioned between the active CMT layers and the substrate. A CdTe buffer layer aids the deposition of the CMT on the substrate and an etch stop layer is also provided. Once the wafer is formed, the buffer layer, the etch stop layer and all intervening layers are etched away leaving a wafer suitable for further processing into an infra red detector.

Infra red detectors and methods of manufacturing infra red detectors using MOVPE

A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate having CMT deposited thereon by MOVPE. The CMT deposited can include a number of layers of differing composition, the composition being controlled during the MOVPE process and being dependent on the thickness of the layer deposited. A CdTe buffer layer can aid deposition of the CMT on the substrate. Once the wafer is formed, the buffer layer, an etch stop layer and any intervening layers can be etched away leaving a wafer suitable for further processing into an infra red detector.

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Basildon, United Kingdom

Sudesh Bains