Intel Corporation

Sudarat Lee

Chelsey Dorow

Kirby Maxey

Uygar E Avci

Carl H Naylor

Chia-Ching Lin

Shriram Shivaraman

Tanay Gosavi

Ashish Verma Penumatcha

Kevin O'Brien

Kevin P O'brien

Matthew V Metz

Gilbert W Dewey

Marko Radosavljevic

Seung Hoon Sung

Charles C Kuo

Nicole K Thomas

Scott Bruce Clendenning

Ramanan Chebiam

Tristan A Tronic

I-Cheng Tung

Patrick Theofanis

Tobias Brown-Heft

Eric Charles Mattson

Thoe Michaelos

Charles Mokhtarzadeh

Sunny Chugh

Thin film transistors having strain-inducing structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a two-dimensional (2D) material layer above a substrate. A gate stack is on the 2D material layer, the gate stack having a first side opposite a second side. A first gate spacer is on the 2D material layer and adjacent to the first side of the gate stack. A second gate spacer is on the 2D material layer and adjacent to the second side of the gate stack. The first gate spacer and the second gate spacer induce a strain on the 2D material layer. A first conductive structure is on the 2D material layer and adjacent to the first gate spacer. A second conductive structure is on the 2D material layer and adjacent to the second gate spacer.

Thin film transistors having strain-inducing structures integrated with 2D channel materials

A transistor includes a channel layer including a transition metal dichalcogenide (TMD) material, an encapsulation layer on a first portion of the channel layer, a gate electrode above the encapsulation layer, a gate dielectric layer between the gate electrode and the encapsulation layer. The transistor further includes a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate structure is between drain contact and the source contact.

Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication

Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

Integrated circuit interconnect structures with graphene cap

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a first transistor on a first level, and a second transistor on a second level above the first level. In an embodiment, an insulating layer is between the first level and the second level, and a via passes through the insulating layer, and electrically couples the first transistor to the second transistor. In an embodiment, the first transistor and the second transistor comprise a first channel, and a second channel over the first channel. In an embodiment, the first second transistor further comprise a gate structure between the first channel and the second channel, a source contact on a first end of the first channel and the second channel, and a drain contact on a second end of the first channel and the second channel.

Stacked 2D CMOS with inter metal layers

Embodiments of the disclosure are directed to advanced integrated circuit (IC) structure fabrication and, in particular, to IC structures with graphene contacts. Other embodiments may be disclosed or claimed.

Integrated circuit structures with graphene contacts

Embodiments disclosed herein comprise semiconductor devices with two dimensional (2D) semiconductor channels and methods of forming such devices. In an embodiment, the semiconductor device comprises a source contact and a drain contact. In an embodiment, a 2D semiconductor channel is between the source contact and the drain contact. In an embodiment, the 2D semiconductor channel is a shell.

TMD inverted nanowire integration

Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.

Transistors with monocrystalline metal chalcogenide channel materials

A transistor includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source structure coupled to a first end of the first and second channel layers, a drain structure coupled to a second end of the first and second channel layers, a gate structure between the source material and the drain material, and between the first channel layer and the second channel layer. The transistor further includes a spacer laterally between the gate structure and the and the source structure and between the gate structure and the drain structure. A liner is between the spacer and the gate structure. The liner is in contact with the first channel layer and the second channel layer and extends between the gate structure and the respective source structure and the drain structure.

Transition metal dichalcogenide nanosheet transistors and methods of fabrication

Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (V). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vwithin the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.

Ribbon or wire transistor stack with selective dipole threshold voltage shifter

A transistor structure includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source material coupled to a first end of the first and second channel layers, a drain material coupled to a second end of the first and second channel layers, a gate electrode between the source material and the drain material, and between the first channel layer and the second channel layer and a gate dielectric between the gate electrode and each of the first channel layer and the second channel layer.

Transition metal dichalcogenide nanowires and methods of fabrication

A transistor includes a channel including a first layer including a first monocrystalline transition metal dichalcogenide (TMD) material, where the first layer is stoichiometric and includes a first transition metal. The channel further includes a second layer above the first layer, the second layer including a second monocrystalline TMD material, where the second monocrystalline TMD material includes a second transition metal and oxygen, and where the second layer is sub-stoichiometric. The transistor further includes a gate electrode above a first portion of the channel layer, a gate dielectric layer between the channel layer and the gate electrode, a source contact on a second portion of the channel layer and a drain contact on a third portion of the channel layer, where the gate electrode is between drain contact and the source contact.

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Hillsboro, OR, United States of America

Sudarat Lee