Storage Technology Corporation

Samsung Electronics Co., Ltd.

Read Rite Corporation

Subrata Dey

Yi-Shung Chaug

Yi Zhang

Xizeng Shi

Matthew R Gibbons

Carlos Dangelo

Hua-Ching Tong

Ephraim Suhir

Peter V Schwartz

Barbara Wacker

Bala Padmakumar

Yuan Xu

Arthur Boren

Darin Olsen

Barry Allen McPherron

Bo Zhou

One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at &#x2dc;1350 cmwith an intensity ID, a G peak at &#x2dc;1585 cmwith an intensity IG, and an intensity ratio I/Iof less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cmK/W or less.

Carbon nanotube-based structures and methods for removing heat from solid-state devices

A method and system for providing a magnetoresistive sensor is disclosed. The method and system include providing a first pinned layer, providing a first spacer layer above the first pinned layer, and providing a free layer above the first spacer layer. The method and system further include providing a second spacer layer above the free layer and providing a second pinned layer above the second spacer layer. The first pinned layer includes a first magnetic layer and a second magnetic layer separated by a first nonmagnetic layer. The first magnetic layer is antiferromagnetically coupled with the second magnetic layer. The second pinned layer includes a third magnetic layer and a fourth magnetic layer separated by a second nonmagnetic layer. The third magnetic layer is antiferromagnetically coupled with the fourth magnetic layer. The first pinned layer and the second pinned layer are pinned by a current carried by the magnetoresistive head during use.

Current pinned dual spin valve with synthetic pinned layers

A recording element is provided for use in a high density thin film recording head. The recording element includes a substrate, a thermally conductive material in contact with the substrate, and an insulative layer in contact with the thermally conductive material. The recording element further includes a magneto-resistive element in contact with the insulative layer such that the magneto-resistive element fails to overlay the thermally conductive material. The thermally conductive material and the insulative layer have thermal conductivities sufficient to dissipate heat from the magneto-resistive element so that heat induced malfunctions of the recording element are minimized. The method for manufacturing the recording element is also provided. The method includes depositing a thermally conductive material in contact with a substrate, depositing an insulative layer in contact with the thermally conductive material, and depositing a magneto-resistive element in contact with the insulative layer such that the magneto-resistive element fails to overlay the thermally conductive material.

Heat exchangeable thin-film recording head element and method for

The method of wet etching an aluminum oxide substrate deposits a thin layer of titanium film or chromium film on the aluminum oxide surface prior to the application of the photo-resist coating to form a barrier between the aluminum oxide and the photo-resist. This barrier layer inhibits the reaction between the aluminum oxide and the photo-resist during the photolithographic process. The undercutting of the aluminum oxide in the wet etching process is therefore controlled by the deposition of the barrier layer comprising the thin layer of titanium film or chromium film. The titanium film used is nominally 30 .ANG. thick to obtain the beneficial effects noted above while the chromium film would be approximately 1000 .ANG. thick.

Method of wet etching aluminum oxide to minimize undercutting

Growing community of inventors

Fremont, CA, United States of America

Subrata Dey