Basf Se Corporation

Polyera Corporation

Flexterra, Inc.

Subramanian Vaidyanathan

Florian Doetz

Ashok Kumar Mishra

Hiroyoshi Noguchi

Marcel Kastler

Silke Annika Koehler

Antonio Facchetti

He Yan

Shaofeng Lu

Yan Zheng

Yucui Guan

Florian Dötz

Bo Zhu

Tobin Jay Marks

Zhihua Chen

Jean-Luc Budry

Mi Zhou

Tero Mustonen

Johan Sebastian Basuki

Nikolai Kaihovirta

Mai Minh-Tien

Bertha Tan

Silke Köhler

A method for producing an organic semiconductor device () having at least one organic semiconducting material () and at least two electrodes () adapted to support an electric charge carrier transport through the organic semiconducting material () is disclosed. The organic semiconducting material () intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer () which at least partially is interposed between the organic semiconducting material () and at least one of the electrodes () of the organic semiconductor device (). The intermediate layer () comprises at least one thiol compound having the general formula HS&#x2014;R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer () an ambipolar charge carrier transport between the electrodes () is suppressed in favor of a unipolar charge carrier transport.

Method for producing an organic semiconductor device

Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Semiconductor materials prepared from dithienylvinylene copolymers

The present invention provides semiconducting compounds, oligomers and polymers of formula wherein  The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Semiconductor materials prepared from bridged bithiazole copolymers

An organic semiconductor device selected from organic diodes, organic field effect transistors, and devices comprising an organic diode and/or organic field effect transistor and a method of producing such a device are provided. The organic semiconductor device comprises at least one semiconducting layer based on a diketopyrrolopyrrole (DPP) polymer. The semiconducting layer may effectively be protected against degradation by radiation and/or oxidation by adding at least one stabilizing agent selected from hydroxybenzophenones, hydroxyphenyl benzotriazoles, oxalic acid anilides, hydroxyphenyl triazines, hindered phenols and/or merocyanines to the DPP polymer layer. The stabilization is effective both during production and during usage of the device, while the device's electronic properties are retained. The stabilizing agent is preferably a UV absorbing agent or an antioxidant or anti-radical agent known from the field of organic polymer technology.

Organic semiconductor device and process for its production

Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic &#x3c0;-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Disclosed are new semiconductor materials prepared from rylene-(&#x3c0;-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Semiconductor materials prepared from rylene-(&#x3c0;-acceptor)copolymers

The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C&#x2014;R, wherein R is H or a C-Calkyl group, R, at each occurrence, is independently selected from H, a Calkyl group, a Calkenyl group, a Chaloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the Calkyl group, the Calkenyl group, and the Chaloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, &#x2014;NO, OH, NH, &#x2014;NH(Calkyl), N(Calkyl), &#x2014;S(O)OH, &#x2014;CHO, &#x2014;C(O)&#x2014;Calkyl, &#x2014;C(O)OH, &#x2014;C(O)&#x2014;OCalkyl, &#x2014;C(O)NH, &#x2014;C(O)NH&#x2014;Calkyl, &#x2014;C(O)N(Calkyl), &#x2014;OCalkyl, &#x2014;SiH, &#x2014;SiH(Calkyl), &#x2014;SiH(Calkyl), and &#x2014;Si(Calkyl); and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, &#x2014;CN, &#x2014;NO, OH, &#x2550;C(CN), &#x2014;NH, &#x2014;NH(Calkyl), N(Calkyl), &#x2014;S(O)OH, &#x2014;CHO, &#x2014;C(O)OH, &#x2014;C(O)&#x2014;Calkyl, &#x2014;C(O)&#x2014;OCalkyl, &#x2014;C(O)NH, &#x2014;C(O)NH&#x2014;Calkyl, &#x2014;C(O)N(C, &#x2014;SiH, &#x2014;SiH(Calkyl), &#x2014;SiH(Calkyl), &#x2014;Si(Calkyl), &#x2014;O&#x2014;Calkyl, &#x2014;O&#x2014;Calkenyl, &#x2014;O&#x2014;Chaloalkyl, Calkyl, Calkenyl, Chaloalkyl, Carylalkyl, Caryloxy and Carylcarbonyl. Mis a repeating unit comprising one or more cyclic moieties; and n is an integer between 2 and 5,000. 

Dithienophthalimide semiconductor polymers

A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N&#x2014;R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Rgroups; Y, at each occurrence, is independently a divalent Calkyl group, a divalent Chaloalkyl group, or a covalent bond; c is from 1 to 6. 

Fused bithiophene-vinylene polymers

The present invention provides a polymer comprising a unit of formula and an electronic device comprising the polymer as semiconducting material.

Semiconductor materials based on diketopiperidinopiperidine copolymers

Semiconductor materials based on thienothiophene-2,5-dione oligomers and polymers

The present invention relates to semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. The semiconducting compounds can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.

Perylene semiconductors and methods of preparation and use thereof

The present invention provides a polymer comprising a unit of formula The present invention also provides an electronic device comprising the polymer as semiconducting material.

Growing community of inventors

Basel, Switzerland

Subramanian Vaidyanathan