Gm Global Technolgoy Operations, Inc.

Continental Automotive Systems Us, Inc.

Subramanian Vadula

Goro Tamai

William R Cawthorne

Richard Joseph Hampo

Mohammad N Anwar

Mohammed Khorshed Alam

Fred Flett

Lizhi Zhu

Bryan M Ludwig

Marko Jaksic

Syed M Kadry

Fengtai Huang

Zilai Zhao

Korobi Basher

A switching circuit includes a semiconductor switch having a Gate terminal, and includes first, second, third, and fourth Gate resistors. The Gate resistors have upstream and downstream ends relative to a location of the semiconductor switch or a driven load. The downstream ends connect to the Gate terminal. First, second, third, and fourth buffer switches have Gate terminals and Source terminals, with the Source terminals connected to the upstream ends of the first, second, third, and fourth Gate resistors, respectively. An optional Gate driver integrated circuit (IC) connects to the Gate terminals of the buffer switches. A microcontroller, responsive to circuit measurements, selects switching control values and Gate resistor identities based on the measurements, and transmits switching control signals and a Gate resistor selection signal to select on/off states of the buffer switches and an optimum switching speed for the semiconductor switch.

Dynamic gate drive system and control method

An electric vehicle includes a direct current (DC) power source with a DC electric power output. An inverter is coupled to receive the DC electric power output of the DC power source, and the inverter has an alternating current (AC) electric power output. An electric motor is coupled to receive the AC electric power output. The electric motor has a driving torque output that is coupled to drive at least one wheel of the vehicle. The inverter further includes a power semiconductor switch, such as an insulated-gate bipolar transistor (IGBT). A protection circuit is coupled to the power semiconductor switch, and the protection circuit has an adjustable protection detection level circuit.

Power switch protection system and method

A circuit and method to provide dynamic fault protection to transistors are disclosed. The fault protection may be particularly suited for protecting insulated gate bipolar transistors (IGBTs).

Operating and controlling insulated gate bipolar transistors in high speed failure mode situations

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Novi, MI, United States of America

Subramanian Vadula