University of South Florida

Subramanian Krishnan

Shekhar Bhansali

Rudraskandan Ratnadurai

Justin Boone

In one embodiment, a method for fabricating thin film tunneling devices using a mask set includes depositing a first layer of material on a substrate, positioning a first photomask over the substrate, exposing the first layer to light that passes through the first photomask, depositing a second layer of material on the substrate, positioning a second photomask over the substrate by aligning a corner marker provided on the second photomask with one of multiple corner markers provided on the first photomask, wherein the corner marker of the first photomask with which the corner marker of the second photomask aligns defines a degree of overlap between a first structure formed using the first photomask and a second structure formed using the second photomask; and exposing the second layer to light that passes through the second photomask.

Systems and methods for forming contact definitions

In one embodiment, a mask set for use in fabricating thin film tunneling devices includes a first photomask configured to form bottom electrodes of the devices, the first photomask comprising a first alignment mark including multiple corner markers, and a second photomask configured to form a continuous top layer of the devices, the second photomask comprising a second alignment mark including a corner marker configured to be aligned with one of the corner markers of the first photomask, wherein a degree of overlap between the bottom electrodes and the continuous top layer depends upon the corner marker of the first photomask with which the corner marker of the second photomask aligns.

In one embodiment, a method for fabricating thin film tunnel devices includes forming multiple bottom electrodes on a substrate, depositing an insulating layer of material on top of each bottom electrode, and directly depositing a single, continuous top layer of conductive material on the insulating layers that does not contact the bottom electrodes, wherein the bottom electrodes, insulating layers, and continuous top layer together form multiple thin film tunnel devices in which the continuous top layer forms the top electrode for each tunnel device and electrically connects the tunnel devices.

In one embodiment, a vertical microcoaxial interconnect includes a dielectric substrate having a top side and a bottom side, an inner conductor extending through the substrate from its top side to its bottom side, an outer conductor that extends through the substrate from its top side to its bottom side, the outer conductor surrounding the inner conductor, a signal line extending to the inner conductor without contacting the outer conductor, and a ground line extending to the outer conductor without contacting the inner conductor or the signal line.

Vertical microcoaxial interconnects

In one embodiment, an electrical circuit formed on a substrate includes a first multi-layer stack and a second multi-layer stack that share a top layer that comprises a continuous piece of conductive material.

Growing community of inventors

Wesley Chapel, FL, United States of America

Subramanian Krishnan