Sandisk Technologies Inc.

Subin Cp

Gopu S

Sainath Viswasarai

A memory device includes a wordline zone table that stores information about how wordlines of one or more memory blocks are divided into wordline zones. The wordline zone table also stores a value associated with each wordline zone. When the memory device receives a command, a controller identifies a wordline associated with the command. The controller uses the wordline zone table to determine the wordline zone, and the value, associated with the wordline. The value is stored in a non-data wordline. When a find last good page (FLGP) process is initiated in response to an ungraceful device shutdown (UGDS) event, the controller determines the value stored in the non-data wordline. The controller compares the value in the non-data wordline to the values in the wordline zone table to determine which wordline zone matches the value. The FLPG process is applied to the wordline zone having the matching value.

Using a zone wordline table to initiate a find last good page process

An apparatus includes control circuits configured to connect to a plurality of non-volatile memory cells. Each non-volatile memory cell is configured to store a plurality of bits of a plurality of logical pages including at least a first bit of a first logical page, a second bit of a second logical page and a third bit of a third logical page. The control circuits are configured to select a subset of the plurality of logical pages for reading, perform pre-read steps, and read a first and at least a second selected logical page of the subset without performing pre-read steps between reading the first and second selected logical pages.

Growing community of inventors

Kozhikode, India

Subin Cp