Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Subin Bae

Yu-Gwang Jeong

Sanggab Kim

Yugwang Jeong

Taesung Kim

Sang Gab Kim

Hyunmin Cho

Hyuneok Shin

Taewook Kang

Sungwon Cho

Yun Jong Yeo

Seon-Il Kim

Jinseock Kim

Daewon Choi

Dongmin Lee

Juhyun Lee

Myounggeun Cha

Sanggun Choi

Sunghoon Yang

Shinil Choi

Joongeol Lee

Hyunah Sung

Changok Kim

Yeoungkeol Woo

Chulmin Bae

Sungjoo Kwon

Dawoon Jung

Daesoo Kim

Hee Jun Yang

A display device includes a transistor disposed on a substrate, an organic layer disposed on the transistor and defining grooves, a first pixel electrode disposed on the organic layer, electrically connected to the transistor, and including a pixel metal layer and a pixel protective layer, the pixel protective layer including at least one of an oxide and a halide and surrounding the pixel metal layer, and a dummy electrode disposed on the organic layer, spaced apart from the transistor, and including a dummy metal layer and a dummy protective layer, the dummy protective layer including at least one of an oxide and a halide and surrounding the dummy metal layer.

Display device and method of manufacturing the same

A display device includes: a substrate including a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, where the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area; a first inorganic layer continuously arranged in the transmission area on the substrate, where a lower opening overlapping the bending area is defined through the first inorganic layer; a blocking layer on the first inorganic layer, a blocking layer opening overlapping the transmission area and an intermediate opening overlapping the lower opening are defined through the blocking layer; and a display element layer on the blocking layer, where the display element layer includes a first display element overlapping the first pixel area and a second display element overlapping the second pixel area.

Display device and method of manufacturing the display device

A display apparatus includes: a substrate; a first semiconductor layer on the substrate, and including a silicon semiconductor; a second semiconductor layer on the first semiconductor layer, and including an oxide semiconductor; a first conductive layer on the second semiconductor layer; at least one metal layer between the first semiconductor layer and the first conductive layer; and a first contact hole to electrically connect the first semiconductor layer to the first conductive layer. An inner surface of the first contact hole includes a side surface of the at least one metal layer.

Display apparatus

A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

Display substrate, method of manufacturing the same, and display device including the same

A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

Display substrate, method of manufacturing display substrate, and display device including display substrate

A display device includes: a pixel circuit disposed on a base layer; an insulating layer disposed on the base layer covering the pixel circuit; a first electrode disposed on the insulating layer; a second electrode disposed on the insulating layer, the second electrode being spaced apart from the first electrode in a first direction; a light-emitting element disposed between the first electrode and the second electrode; a connection electrode connecting the first electrode and the light-emitting element and connecting the second electrode and the light-emitting element; a first auxiliary insulating layer disposed on the light-emitting element; and a second auxiliary insulating layer disposed on the first auxiliary insulating layer. The second auxiliary insulating layer includes a first insulating portion overlapped with the first auxiliary insulating layer, and a second insulating portion disposed outwardly from the first insulating portion and not overlapping the first auxiliary insulating layer.

Display device and method of fabricating the same

An OLED device includes a substrate, a first active layer, a first gate electrode, a second gate electrode, first source and first drain electrodes, a first high dielectric constant (high-k) insulation structure, and a light emitting structure. The substrate has a first region and a second region. The first active layer is disposed in the first region on the substrate. The first gate electrode is disposed on the first active layer, and has a first thickness. The second gate electrode is disposed on the first gate electrode. The first source electrode and first drain electrode are disposed on the second gate electrode, and constitutes a first semiconductor element together with the first active layer and the first gate electrode. The first high-k insulation structure is disposed between the first gate electrode and the second gate electrode, and is spaced apart from the first source electrode and first drain electrode.

Organic light emitting display device and method of manufacturing organic light emitting display device

Provided is an electronic apparatus. The electronic apparatus includes a base substrate which includes a front surface and a rear surface facing each other, and in which a module hole passing through the front and rear surfaces is defined, a thin film transistor disposed on the base substrate, a light emitting device including a first electrode connected to the thin film transistor, a second electrode disposed on the first electrode, and a light emitting pattern disposed between the first electrode and the second electrode, an encapsulation layer which covers the light emitting device, an input sensing unit disposed on the base substrate and including a plurality of first conductive patterns and second conductive patterns disposed on the first conductive patterns, and an insulation layer disposed between the first conductive patterns and the second conductive patterns. The encapsulation layer is disposed between the first conductive patterns and the second conductive patterns.

Electronic apparatus and method for manufacturing the same

A display device includes a thin film transistor, a gate insulting layer, an interlayer insulating layer, a data line, a spacer, and a pixel. The thin film transistor includes a semiconductor layer and a gate electrode. The semiconductor layer includes a source region and a drain region on respective sides of the channel region. The gate insulating layer is between the semiconductor layer and the gate electrode. The interlayer insulating layer covers the thin film transistor. The data line contacts the semiconductor layer via a hole passing through the gate insulating layer and the interlayer insulating layer. The spacer is on an inner wall of the hole and contacting the data line. The pixel electrode is electrically connected to the thin film transistor.

Display device

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Hwaseong-si, South Korea

Subin Bae