Karlsruher Institut Fur Technologie

Lawrence Livermore National Security, LLC

Subho Dasgupta

Horst Hahn

Theodore F Baumann

Juergen Biener

Babak Nasr

Anna Stösser

An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.

Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof

In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

Nanoporous carbon tunable resistor/transistor and methods of production thereof

Growing community of inventors

Eggenstein-Leopoldshafen, Germany

Subho Dasgupta