Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Ihp Gmbh—innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronic

Universitat Kassel

Subhajit Guha

Giovanni Capellini

Thomas Schroder

Chafik Meliani

Farabi Ibne Jamal

Bernd Witzigmann

Thomas Schröder

A measuring carrier for position-resolved meteorological determination of a measurement variable dependent on the dielectric permittivity of a device under test. The measuring carrier has a supporting means comprising a measuring surface, to which the device under test can be applied, and a measuring transmission line which entirely or partially forms the measuring surface and comprises a multiplicity of transmission line cells for the purpose of transmitting a radio-frequency measurement signal which can be injected at the input port. The measuring surface is structured in a cellular manner, wherein each of the transmission line cells has a cell-individual propagation constant with respect to the radio-frequency measurement signal in a state free of a device under test. This constant differs from the respective cell-individual constants of the other transmission line cells.

Inhomogeneous transmission line for determining the permittivity of a device under test in a position-resolved manner

A tunable plasmon resonator, comprising a plasmon resonance layer made of graphene, a crystalline group-IV-semiconductor material or a crystalline group-III-V semiconductor material, and arranged on a carrier substrate, the plasmon resonance layer having a plasmon resonance region that is exposed to a sensing volume and a tuning device that is integrated into the plasmon resonator and arranged and configured to modify a density of free charge carriers in the plasmon resonance region or to modify an effective mass amount of the free charge carriers in the plasmon resonance region by applying of a control voltage to tuning control electrode(s) of the tuning device, thereby setting a plasmon frequency of plasmon polaritons in the plasmon resonance region to a desired plasmon frequency value within a plasmon frequency tuning interval, for resonance excitation of plasmon polaritons by incident electromagnetic waves of a frequency corresponding to the set plasmon frequency value.

Sub THZ to mid infrared tunable semiconductor plasmonics

Growing community of inventors

Frankfurt-am-Main, Germany

Subhajit Guha