Skc Co., Ltd.

Skc Solmics Co., Ltd.

Enpulse Co., Ltd.

Su Young Moon

Jang Won Seo

Sunghoon Yun

Jaein Ahn

Jong Wook Yun

Hye Young Heo

Myung-Ok Kyun

A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less

Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad

A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; 

Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.

Polishing pad with improved fluidity of slurry and process for preparing same

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 &#x3bc;m, a specific gravity of 0.7 to 0.9 g/cm, a surface hardness at 25&#xb0; C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 &#x3bc;m.

Porous polyurethane polishing pad and process for preparing a semiconductor device by using the same

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 &#x3bc;m, a specific gravity of 0.7 to 0.9 g/cm, a surface hardness at 25&#xb0; C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 &#x3bc;m.

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Anyang-si, South Korea

Su Young Moon