Samsung Electronics Co., Ltd.

Su-Young Lee

Yun Tae Lee

Jae Yong Park

Je Suk Lee

Jun-Woo Park

Joon Seo Yim

Sungjun Kim

Dong-gun Lee

Jeongwook Lee

Eunjik Yi

Hwan-seok Seo

Sooman Jeong

Rae-won Yi

Byoung-Sup Ahn

Daejung Kim

Hwansun Sung

Tae-geun Kim

Hyunseok Yang

Joohyoung Lee

Jong-Gul Doh

Jonha Lee

Kwangjin An

An electronic device includes first and second image sensors, an image signal processor, and a main processor. The first and second image sensors photograph an object in first and second FOVs to generate first and second signals, respectively. The image signal processor generates first image data based on the first signal, generates second image data based on the second signal, and generates cropped image data based on cropping ROI from the second image data. The main processor generates a first video stream based on the first image data, generates a second video stream based on the cropped image data, and outputs the first video stream to a display device. The main processor stops outputting the first video stream to the display device and initiates outputting the second video stream to the display device in response to receiving a user input command.

Electronic device including image sensor having multi-crop function

An electronic device performs HDR processing by using a plurality of image sensor blocks including a first image sensor block that photographs an object at a first field of view and a second image sensor block that photographs the object at a second field of view greater than the first field of view. An image signal processor generates first image data and second image data based on the photographed object. A main processor crops image data among image data of the second sensor that correspond to image data of the first sensor, and performs HDR processing based on the first image data and the cropped second image data.

Electronic device for performing video HDR processing based on image data obtained by plurality of image sensors

An image sensor module is provided. The image sensor module includes a printed circuit board (PCB), an image sensor chip disposed on a first plane of the PCB and electrically connected to the PCB, and an image signal processing chip disposed on the first plane of the PCB and electrically connected to the PCB. An aspect ratio of the image signal processing chip is at least two times greater than an aspect ratio of the image sensor chip. A minimum feature size of a metal line implemented in the image sensor chip is at least 1.5 times greater than a minimum feature size of a metal line implemented in the image signal processing chip.

Image sensor modules, methods of manufacturing the same, and image processing systems including the image sensor modules

An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Exposure apparatus and method of manufacturing semiconductor device

A pellicle for an EUV lithography may include a pellicle film, a supporting structure and a handling block. The pellicle film may have a first surface for orienting opposite to a mask, and a second surface opposite to the first surface and for orienting toward the mask. The pellicle film may allow the EUV, which may pass through the mask, to penetrate the pellicle film. The supporting structure may be arranged on the second surface of the pellicle film to support the pellicle film. The handling block may be arranged on the first surface of the pellicle film. The handling block may have an opening configured to expose the pellicle film. Thus, the pellicle may be handled using the thick handling block, not the thin pellicle film, so that the thin pellicle film may not be damaged. The pellicle may protect the mask from byproducts generated in the EUV lithography process so that the mask may not be contaminated.

Method, photolithography method, and method of manufacturing a semiconductor device using a pellicle film

Reflective photomask blanks are provided. The reflective photomask blank includes a multi-layered reflection layer on a photomask substrate, a capping layer directly disposed on a top surface of the multi-layered reflection layer to include transition metal and silicon, a passivation layer disposed on a surface of the capping layer opposite to the multi-layered reflection layer, and a light absorption layer on the passivation layer.

Reflective photomask blanks and reflective photomasks

Provided are a semiconductor chip attaching apparatus and a semiconductor chip attaching method. The semiconductor chip attaching apparatus includes a collet body comprising a pick-up pad and a pad support and a collet plate on the collet body, the collet plate having a central portion. A lower surface of the edge portion contacts an upper surface of the pad support. An edge portion of the lower surface is spaced apart from the upper surface of the pad support. The apparatus further includes a first pipe extending through the collet plate and the collet body. The collet plate includes a second pipe in the edge portion.

Semiconductor chip attaching apparatus

Growing community of inventors

Seongnam-si, South Korea

Su-Young Lee