Samsung Electronics Co., Ltd.

Seoul National University

Su-Yeon Kim

Hyang-Ja Yang

Bo-Tak Lim

Woo-Yeong Cho

Sung Young Yun

Byung-Gil Choi

Yeong Suk Choi

Jong-Pil Son

Soo Young Park

Jin Hong Kim

Jong-Soo Seo

Gong-Heum Han

Young-Kug Moon

Hyung-rok Oh

Hyeong-Ju Kim

Seyoung Jung

Min-Woo Choi

Disclosed are a film and a photoelectric device including the compound of Chemical Formula 1 and configured to selectively absorb light in a blue wavelength region, and an image sensor and electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Blue light absorbing film, and photoelectric device, image sensor and electronic device including the same

In an embodiment, a bit line sense amplifier of a semiconductor memory device with an open bit line structure includes sense amplifier blocks, first voltage drivers, and a second voltage driver. The sense amplifier blocks include a first sense amplifier and a second sense amplifier, each sensing and amplifying a signal difference between a bit line and a complementary bit line. The first voltage drivers apply a power source voltage to the first sense amplifier, and the second voltage driver applies a ground voltage to the second sense amplifier. The first voltage drivers are disposed for every two or more sense amplifier blocks in a bit line sense amplifier region in which the sense amplifier blocks are arranged, and the second voltage driver is disposed in a conjunction region in which a control circuit is located to control the sense amplifier blocks. Both capacitive noise and device size are minimized.

Bit line sense amplifier of semiconductor memory device having open bit line structure

A semiconductor memory device comprises a cell region including a plurality of unit memory cells, and a peripheral circuit region, the peripheral circuit region including a plurality of peripheral circuit devices for operating the plurality of memory cells and at least one operating capacitor formed adjacent to at least one peripheral circuit device at a pseudo circuit pattern region.

Semiconductor memory device having a peripheral region including operating capacitors

A phase change memory device is provided which includes a memory cell array including a plurality of memory cells, and a write driver for supplying a program current to the memory cell array through a global bitline. The memory cell array includes first and second cell regions, a first local bitline connected to the first cell region, a second local bitline connected to the second cell region, and a select region disposed between the first and second cell regions and supplying the program current supplied through the global bitline to the first and second local bitlines in response to a local select signal.

Phase change memory device and memory cell array thereof

A magnetic random access memory device includes a digit line, a bit line, and a magnetic memory cell disposed in an intersection between the digit line and the bit line. The digit line is extended in a first direction on a substrate. The bit line is extended in a second direction on the substrate. The magnetic memory cell includes a rectangular free magnetic layer magnetized in a direction according to an externally applied magnetic field. A major axis of the rectangular free magnetic layer is substantially parallel to the first direction, and a minor axis of the rectangular free magnetic layer is substantially parallel to the second direction. Thus, multiple input/output program (write) operations and multiple input/output repair operations may be effectively performed.

Magnetic random access memory device

Growing community of inventors

Suwon-si, South Korea

Su-Yeon Kim