Asml Netherlands B.v.

Su-Ting Cheng

Armand Eugene Albert Koolen

Sergei Sokolov

Markus Franciscus Antonius Eurlings

Sergey Tarabrin

Koenraad Remi André Maria Schreel

A technique of measuring a parameter of a patterning process is disclosed. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.

Method of measuring a parameter of a patterning process, metrology apparatus, target

Disclosed is a method of mitigating for a process dependent stray light artifact on a measurement a structure. The method comprises obtaining a calibration scaling factor for the process dependent stray light artifact based on a reference angle resolved measurement and target angle resolved measurement, and a correction of an image with the obtained calibration scaling factor.

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Eindhoven, Netherlands

Su-Ting Cheng