Skhynix Inc.

Su Ock Chung

Jung Park

Tae Kyun Kim

Jae Man Yoon

Jin Hwan Jeon

Seung Hwan Kim

Dong Sun Sheen

Il Sup Jin

Seon Yong Cha

A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.

Method for fabricating a semiconductor device

Semiconductor memory device

A memory cell includes: a substrate; an active layer spaced apart from a surface of the substrate and extending in a direction which is parallel to the surface of the substrate; a bit line coupled to one side of the active layer and extending in a direction perpendicular to the surface of the substrate; a capacitor coupled to another side of the active layer and spaced apart from the surface of the substrate; and a word line vertically spaced apart from the active layer and extending in a direction intersecting with the active layer, wherein the word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other.

Memory cell and memory device

Growing community of inventors

Gyeonggi-do, South Korea

Su Ock Chung