Samsung Electronics Co., Ltd.

Su-Min Kim

Hyun-woo Kim

Min Hyung Kim

Su-Min Park

Kyoung-seon Kim

Hyo-Jin Yun

So-Ra Han

Hai-sub Na

Jin Su Park

Chang-min Park

Cha-Won Koh

Soo-jin Hong

Bong-hyun Kim

Hyo-Jung Kim

Jeon-Il Lee

Dong-Woon Shin

Min-Ju Park

Display screen or portion thereof with graphical user interface

Display screen or portion thereof with transitional graphical user interface

In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Method of forming micropatterns

A lithography apparatus and a method of using the same, the apparatus including a stage for accommodating a substrate that has a photoresist film thereon; a main unit on the stage, the main unit being configured to irradiate a projection beam to the photoresist film; and an electric field unit adjacent to the stage, the electric field unit being configured to apply an electric field to the photoresist film, wherein the electric field unit is configured to be turned on at a same time as or before irradiation of the projection beam, and is configured to be turned off at a same time as or after termination of the projection beam.

Lithography apparatus having effective thermal electron enhancement unit and method of forming pattern using the same

The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern

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Suwon-si, South Korea

Su-Min Kim