Lg Innotekco., Ltd.

Su Lk Park

Min Sung Kim

Youn Joon Sung

Yong Gyeong Lee

Ki Man Kang

Eun Dk Lee

Hyun Soo Lim

Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

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Seoul, South Korea

Su Lk Park