Samsung Display Co., Ltd.

Su-Kyoung Yang

Chang-Oh Jeong

Joon-Yong Park

Sang-Won Shin

Chan-Woo Yang

Eun-Young Lee

Chaun-Gi Choi

Hui-Won Yang

Byeong-Beom Kim

Seung-Ho Jung

Hye-Young Park

Hyeong-Suk Yoo

Hyun-Eok Shin

Joo-Hee Jeon

Hye-Hyang Park

Dong-Min Lee

Hyeon-Sik Kim

Hong-Long Ning

Kyung-Seop Kim

Xin-Xing Li

Hyun-Ju Kang

Gyung-Min Baek

An electrostatic chuck and a substrate processing apparatus including the same are disclosed. In one aspect, the electrostatic chuck includes a stage configured to support a substrate including a panel formation region and a dummy region surrounding the panel formation region. The electrostatic chuck includes a substrate fixing unit including a plurality of electrode patterns insulated from the substrate and spaced apart from one another, the substrate fixing unit at least partially overlapping the dummy region of the substrate and not overlapping the panel formation region of the substrate.

Method of fixing substrate using electrostatic chuck and substrate processing apparatus including the same

A transparent display device includes a base substrate having a pixel area and a transmission area, a barrier layer disposed on the base substrate, a pixel circuit disposed in the pixel area, a display structure disposed on the pixel circuit, a transmitting structure disposed in the transmission area, an adhesive layer disposed between the base substrate and the barrier layer, and between the base substrate and the transmitting structure, and a transmitting window defined in the transmission area where the transmitting structure may include a composition including silicon oxynitride, the adhesive layer may include aluminum oxide, and the transmitting window may expose a surface of the transmitting structure.

Transparent display device and method of manufacturing the same

In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

System and method of manufacturing a thin film transistor substrate

A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.

Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same

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Yongin-si, South Korea

Su-Kyoung Yang