Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Su Kyoung Yang

Dong Min Lee

Chan Woo Yang

Hyun Eok Shin

Sang Won Shin

Chang Oh Jeong

Hyune Ok Shin

Sang Gab Kim

Sang Woo Sohn

Joon Geol Lee

Kyeong Su Ko

Do Keun Song

Jung Hak Nam

Gyung Min Baek

Joon Yong Park

Jung Gun Nam

Kang Soo Han

Moon Jung An

Gwang Min Cha

Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Display device

Display device and manufacturing method thereof

A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 &#x212b; or more to 144 &#x212b; or less.

Thin film transistor substrate

A thin film transistor includes a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 &#x212b; or more to 144 &#x212b; or less.

Provided is a polarizer. The polarizer includes a base layer and a wire grid layer which is disposed on the base layer and which include a plurality of wire metal patterns extending along a first direction and spaced apart from each other along a second direction crossing the first direction, wherein the wire grid layer is made of an aluminum (Al) alloy containing nickel (Ni) and lanthanum (La).

Polarizer, method of manufacturing the same, and display device including the same

A thin-film transistor array panel includes a gate line disposed on a first substrate, the gate line including a gate electrode, a semiconductor layer disposed on the first substrate, the semiconductor layer including an oxide semiconductor, a data wire layer disposed on the first substrate, the data wire layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a capping layer disposed on the data wire layer, a tilt layer disposed on the capping layer, and a passivation layer disposed on the tilt layer, in which the tilt layer includes a silsesquioxane-based copolymer.

Thin film transistor array panel, liquid crystal display and manufacturing method thereof

A display device and a method of manufacturing the display device are provided. According to an exemplary embodiment, a display device includes: a substrate; a gate electrode disposed on the substrate; a semiconductor pattern disposed on the gate electrode; data wiring disposed on the semiconductor pattern and having a data line, a source electrode, and a drain electrode; a first barrier layer disposed between the data wiring and the semiconductor pattern; and undercuts disposed on at least one side of each segment of the first barrier layer.

An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

Growing community of inventors

Yongin-si, South Korea

Su Kyoung Yang