Samsung Electronics Co., Ltd.

Su Jin Park

Taehyung Kim

Dae Young Chung

Kwang Ho Lee

Jun Ok Moon

Sun Young Kim

Jang Gn Yun

Ju Hyun Kim

Won Sik Yoon

Ha Il Kwon

Sang Hee Park

Kwang Hee Kim

Sang Jo Lim

Young Hyun Jun

Hee-Sung Kam

Joung Yeal Kim

Byung Joo Go

Jae Woo Jang

Kyoung Min Lee

Young Lyeol Yang

A semiconductor device includes: a substrate includes an active area; a gate structure intersecting the active area; a source/drain area disposed on the active area; a lower contact disposed on the source/drain area or the gate structure; an upper contact disposed on the lower contact; and a plurality of conductive lines disposed on the upper contact, wherein the plurality of conductive lines extend in a first direction parallel to an upper surface of the substrate, wherein the plurality of conductive lines includes a first conductive line disposed on the upper contact, wherein a size in the first direction of the lower contact is smaller than a size in the first direction of the upper contact, wherein a size in a second direction of the lower contact is greater than a size in the second direction of the upper contact, wherein the second direction intersects the first direction.

Semiconductor device, nonvolatile memory device including the same, and electronic system including the same

A quantum dot device including an anode and a cathode, a light emitting layer disposed between the anode and the cathode, the light emitting layer comprising quantum dots, a first hole auxiliary layer disposed on the anode, the first hole auxiliary layer including poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate or a derivative thereof (PEDOT:PSS), a second hole auxiliary layer disposed on the first hole auxiliary layer and including a hole transport material different from the PEDOT:PSS, wherein the light emitting layer is disposed on the second hole auxiliary layer, wherein the first hole auxiliary layer has a first surface facing the anode and a second surface facing the second hole auxiliary layer, and the second surface includes a surface modification region including a surface modification material having a carboxylic acid group, a phosphonic acid group, a sulfonic acid group, or a salt thereof. An electronic device that includes the quantum dot device.

Quantum dot device and electronic device

A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.

Memory device

A power supply device includes; first/second boost circuits that boost voltages applied to a first/second boost nodes in response to a first/second main signals, and respectively operated first/second transmission unit that control provision of boosted voltages to an output node. The power supply device also includes a bulk voltage controller connected between the boosted nodes and controlling a connection between the output node and a bulk node in response to a bulk control signal. Voltages respectively applied to the first and second transmission units are determined in response to an output node voltage, as well as the first/second main signals.

Power supply device for charge pumping

Growing community of inventors

Gwangmyeong-si, South Korea

Su Jin Park