Samsung Electronics Co., Ltd.

Csk Corporation

Su Ji Gim

Jin Hong Kim

Young Seok Roh

Il Jun Jeon

Seo Young Maeng

Jung Joon Pyeon

Jong Yong Bae

A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.

Scrubber, ALD process system including the scrubber and method for fabricating semiconductor device using the scrubber

Growing community of inventors

Hwaseong-si, South Korea

Su Ji Gim