Samsung Electronics Co., Ltd.

Su-Jeong Park

Ju-Il Choi

Kwang-Jin Moon

Dong-Chan Lim

Ju-Bin Seo

Tae-Seong Kim

Atsushi Fujisaki

A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.

Semiconductor device having a through silicon via and methods of manufacturing the same

An integrated circuit device includes a substrate, a landing pad on the substrate, and a through-via structure passing through the substrate and connected to the landing pad. The through-via structure may include a conductive plug, a first conductive barrier layer covering a sidewall and a lower surface of the conductive plug, and a second conductive barrier layer covering a sidewall of the first conductive barrier layer.

Integrated circuit device and method of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Su-Jeong Park