Electronics and Telecommunications Research Institute

Su Jae Lee

Seong Hyun Kim

Chi-Sun Hwang

Jae Bon Koo

Hye Yong Chu

Jeong Ik Lee

Seung Youl Kang

Chan Woo Park

Jaehyun Moon

Seongdeok Ahn

Ji-Young Oh

Jae-Eun Pi

Bock Soon Na

Tae Hyoung Zyung

Jin A Park

Min Hwan Kwak

Han Cheol Ryu

Hye Jin Kim

Kyoung Ik Cho

Young Tae Kim

Sang Seok Lee

Young Sam Park

Nam Sung Cho

Sang Hoon Cheon

In-Kyu You

Chul Woong Joo

Yong Suk Yang

Sang Chul Lim

Tae-Youb Kim

Kwang Yong Kang

Soon-Won Jung

Kang-Ho Park

Sung Haeng Cho

Young-deuk Jeon

Byoung-Hwa Kwon

Min Ki Ryu

Seungeon Moon

Seung Eon Moon

Taeyoub Kim

Kang-Jun Baeg

Jae Hyun Moon

Provided is a strain sensor. The strain sensor according to embodiments of the inventive concept includes a flexible substrate, rigid patterns on the flexible substrate, the rigid patterns including a first pattern and a second pattern spaced apart from the first pattern in a first direction, a first electrode on the first pattern, a second electrode on the second pattern, the second electrode being spaced apart from the first electrode, and a piezoresistive layer connecting the first electrode and the second electrode. Here, each of the rigid patterns may have a stiffness greater than that of the flexible substrate.

Multi-axis strain sensor

Provided is a flexible touch panel. The flexible touch panel includes a first sensor part extending in a first direction on a substrate, a second sensor part extending in a second direction crossing the first direction on the substrate, and a protective layer surrounding the first and second sensor parts, wherein the first sensor part includes first sensor patterns spaced apart from each other in the first direction, a first connection electrode disposed between the first sensor patterns adjacent to each other, and first connection patterns connecting the first connection electrode and the first sensor patterns to each other, wherein each of the first sensor patterns includes first electrode patterns spaced apart from each other in a form of a mesh and first wiring patterns connecting the adjacent first electrode patterns to each other, wherein each of the first wiring patterns and the first connection patterns has a serpentine structure, wherein the first electrode patterns and the first wiring patterns include the same material as each other.

Flexible touch panel and method of manufacturing thereof

Provided is stretchable electronics. The stretchable electronics includes stretchable substrate, first support patterns disposed on a first surface of the stretchable substrate, and output devices disposed on the first patterns, respectively. The first support patterns are arranged in a first direction and a second direction, which are parallel to an extension direction of the substrate, and each of the output devices generates an output stimulation.

Stretchable electronics and method for fabricating the same

Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.

Complex biometric sensor including color conversion layer

Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

Pressure sensing element

A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.

Oxide transistor with nano-layered structure

A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.

Flexible flat cable and manufacturing method thereof

Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.

Environmental gas sensor and method of manufacturing the same

A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.

Capacitive gas sensor and method of fabricating the same

A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABOstructure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaSr)TiOthin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.

Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same

Provided are a distributed analog phase shifter and a method of manufacturing the same, which reduce a change in a characteristic impedance while changing a phase velocity with respect to an applied voltage. In the distributed analog phase shifter, a coplanar waveguide (CPW) is formed in a line form on a substrate. A plurality of ferroelectric capacitors is periodically loaded to the CPW. The ferroelectric capacitors include a ferroelectric film in a pattern form and defines the ferroelectric film affected by the applied voltage within an area of the ferroelectric capacitors. Accordingly, the change in the phase velocity with respect to the applied voltage is maintained without the change of the CPW characteristic and a return loss characteristic and a total insertion loss are improved since a total dielectric loss of the ferroelectric film is decreased.

Method of manufacturing distributed analog phase shifter using etched ferroelectric thin film

Growing community of inventors

Daejeon, South Korea

Su Jae Lee