Electronics and Telecommunications Research Institute

Su Hwan Oh

Oh Kee Kwon

Kisoo Kim

Chul-Wook Lee

O-Kyun Kwon

Moon Ho Park

Sahng Gi Park

Ki-Hong Yoon

Min Su Kim

Yongsoon Baek

Yong Soon Baek

Byung-Seok Choi

Ji Myon Lee

Hyun Soo Kim

Kyong Hon Kim

Kwang Ryong Oh

Young Ahn Leem

Ki Soo Kim

Sahnggi Park

Kwang-Ryong Oh

Jongbae Kim

Chul Wook Lee

Ki Hwan Kim

Young-Tak Han

Jung Jin Ju

Jong Moo Lee

Sung Bock Kim

Dae Kon Oh

Su Hyun Kim

Young Tak Han

Gyung Ock Kim

Kwang Seong Choi

Hyun Sung Ko

Yun Sub Chung

Byungseok Choi

Kihong Yoon

Young Chul Chung

Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.

Laser diode and manufacturing method of the same

Provided are an optical waveguide device and a laser apparatus including the same. The optical waveguide device includes a peripheral part disposed on an edge region of a substrate, an air pocket disposed on a central region of the substrate within the peripheral part, an optical waveguide comprising a core layer, which is disposed on an upper portion of the substrate within the air pocket to extend in a first direction, and an electrode on the core layer, and a plurality of hinges disposed on the air pocket to connect the optical waveguide to the peripheral part in a second direction crossing the first direction.

Optical waveguide device and laser apparatus including the same

Provided is a laser device according to embodiments of the inventive concept comprising a substrate including a gain region, a phase control region, and a tuning region arranged along a first direction, the substrate having an air gap which extends from the phase control region to the tuning region, an upper clad layer on the substrate, a waveguide structure extending in the first direction between the upper clad layer and the substrate, a first upper electrode disposed on the upper surface of the upper clad layer of the tuning region, and a lower electrode disposed on a lower surface of the substrate and extending from the gain region to the tuning region, wherein the air gap may have a larger width than the waveguide in a second direction crossing the first direction.

Laser device

Disclosed are a wavelength-selectable laser diode and an optical communication apparatus including the same. The wavelength-selectable laser diode includes a substrate, which includes a gain region, a tuning region spaced apart from the gain region, and a phase adjusting region between the tuning region and the gain region, a waveguide layer on the substrate, a clad layer on the waveguide layer, and gratings disposed on the substrate or the clad layer in the gain region and the tuning region.

Wavelength-selectable laser diode and optical communication apparatus including same

An optical device according to the embodiment of the inventive concept includes a waveguide path including a light generation region, a wavelength variable region, and a light modulation region, a first light waveguide layer provided in the light generation region to generate light, a second light waveguide layer provided in the wavelength variable region and connected to the first light waveguide layer, a ring-shaped third light waveguide layer provided in the light modulation region and connected to the second light waveguide layer, and first and second light modulation electrodes spaced apart from each other with the light modulation region therebetween. Here, the first light modulation electrode, the third light waveguide layer, and the second light modulation electrode vertically overlap each other.

Optical device and driving method thereof

An optical apparatus includes a cooling device with a lower clad disposed thereon; a waveguide disposed on the lower clad and including an active waveguide to define a gain section and a passive waveguide to define a wavelength-tunable section; gratings disposed in the lower clad of the wavelength-tunable section; an upper clad disposed on the waveguide; a first upper electrode disposed on the upper clad of the gain section; and a second upper electrode disposed on the upper clad of the wavelength-tunable section. The lower clad of the wavelength-tunable section has a recess region to expose an upper surface of the cooling device, the recess region forming an air gap-having a height of 10 &#x3bc;m to 80 &#x3bc;m from the upper surface of the cooling device. The gratings are formed in a depth of at least 5 &#x3bc;m from a bottom surface of the lower clad of the recess region.

Optical apparatus including a cooling device and a gap

Provided are an optical apparatus, a manufacturing method of a distributed Bragg reflector laser diode, and a manufacturing method of the optical apparatus, the an optical apparatus including a cooling device, a distributed Bragg reflector laser diode having a lower clad including a recess region on one side of the cooling device and connected to another side of the cooling device, and an air gap between the cooling device and the distributed Bragg reflector laser diode, wherein the air gap is defined by a bottom surface of the lower clad in the recess region and a top surface of the cooling device.

Optical apparatus, manufacturing method of distributed Bragg reflector laser diode and manufacturing method of optical apparatus

Provided is a distributed Bragg reflector tunable laser diode including a substrate provided with a gain section having an active waveguide from which a gain of laser light is obtained and a distributed reflector section having a passive waveguide connected to the active waveguide, wherein the distributed reflector section includes gratings disposed on or under the passive waveguide, a current injection electrode disposed on the passive waveguide and configured to provide a current into the passive waveguide to electrically tune a wavelength of the laser light, and a heater electrode disposed on the current injection electrode and configured to heat the passive waveguide to thermally tune the wavelength of the laser light, wherein the gratings, the current injection electrode, and the heater electrode vertically overlap each other.

Distributed Bragg reflector tunable laser diode

Provided herein is a radio frequency probe apparatus including a RF waveguide including a ground electrode and a signal electrode, a register connected to the signal electrode, a RF connector including an outer conductor connected to the ground electrode, an inner conductor connected to the signal electrode, and a dielectric body filling a portion between the outer conductor and the inner conductor, and a single tip probe connected to the signal electrode of the RF waveguide, or the register.

Radio frequency probe apparatus

In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics.

Luminescent diode, method for manufacturing the luminescent diode and wavelength tunable external cavity laser using the luminescent diode

A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.

Superluminescent diode and method for implementing the same

Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Superluminescent diode, method of manufacturing the same, and wavelength-tunable external cavity laser including the same

A laser module includes a Transmitter Optical Sub-Assembly (TOSA) and a heat radiating means. The TOSA generates light by an electrical signal and transmits the generated light through an optical fiber. The heat radiating means is in contact with the TOSA to discharge heat generated by the TOSA.

Growing community of inventors

Daejeon, South Korea

Su Hwan Oh