Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Dorco Co., Ltd.

Seoul National University

Lg Semicon Co., Ltd.

Philosys Co., Ltd.

Su Hwan Kim

Young Ho Park

Seong Ok Bae

Byung Sun Ahn

Sang Won Jung

Dong Hwan Jeong

Min Ji Kim

Hye Jeong Jang

Young Rae Jo

Min Sik Son

Dong Hwan Kim

Ji Sung Kim

Toshiro Nakanishi

Sang Yeol Kang

Kyoo Ho Jung

Sang Hyo Lee

Jin Soak Kim

Sung Kweon Baek

In Hwan Choi

Won Sik Choi

Eun Ae Chung

Tae Hyun An

Dong Kwan Baek

Yu Kyung Shin

Gab Jin Nam

Ji Hoon Pyo

Jeong In Bag

A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).

Capacitor structure, semiconductor memory device including the same, method for fabricating the same, and method for fabricating semiconductor memory device including the same

A storage device includes a nonvolatile memory device including a plurality of nonvolatile memories; a controller configured to allocate write blocks of the nonvolatile memory device to a plurality of streams provided from an outside; and a buffer memory configured to store a result of allocation of the write blocks to the plurality of streams, wherein the controller is further configured to reallocate the write blocks of the nonvolatile memory device to the plurality of streams based on the result of allocation stored in the buffer memory.

Storage device, storage system, and operating method thereof capable of dynamically allocating write blocks to a stream

A razor blade cartridge includes: a housing: a razor blade fixedly mounted in the housing including: an edge that is elongated in a direction orthogonal to shaving direction, the edge includes a cutting edge formed in a single arch and opposing rear and front faces, wherein the cutting edge extends along a longitudinal direction which is orthogonal to shaving direction; a connection portion extended and bent from the edge toward a direction orthogonal to the longitudinal direction and orthogonal to the shaving direction, the connection portion having faces continuous with the front and rear faces of the edge respectively; and a support portion extending from the connection portion in the direction orthogonal to both the longitudinal direction and the shaving direction, the support portion supporting the edge and the connection portion, the connection portion and the support portion are a single body.

Unitary razor blade and shaving razor cartridge using same

The present invention relates to a unitary razor blade and to a shaving razor using the same, and more particularly, to a razor blade which is shaped into a geometrical structure so as to achieve the maximized strength thereof. The razor blade according to the present invention comprises: an edge portion having a curved cutting edge; a connection portion which extends from the edge portion and which is formed into a curve; and a support portion extending from the edge portion to support the edge portion and the connection portion, where the edge portion, the connection portion and the support portion are combined into a single body.

There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).

Method of manufacturing semiconductor device

An amplitude shift keying (ASK) demodulator and a communication apparatus including the same are provided. The ASK demodulator includes an envelope detector, a clock generator, a plurality of elementary demodulators, and a post signal processor. The envelope detector is configured to detect an envelope of an ASK modulated signal and to generate an envelope signal. The clock generator is configured to generate a main clock signal and first through n-th clock signals, where n is a positive integer of at least 2. The plurality of elementary demodulators are each configured to sample the envelope signal using a first sampling clock signal and a second sampling clock signal, and to output first through n-th elementary demodulated signals based on a difference between the sampled envelope signals using the first sampling clock signal and the second sampling clock signal. The post signal processor is configured to generate a final demodulated signal using at least one of the first through n-th elementary demodulated signals.

Amplitude shift keying demodulator and communication apparatus including the same

Structure of a ventilation motor assembly in a microwave oven including a ventilation motor having first and second shafts fitted in opposite directions, a sirocco fan interlocked with the first shaft for drawing air in a direction of the first shaft and discharging in a direction perpendicular to the first shaft, and a radial fan interlocked with the second shaft for drawing air in a direction perpendicular to the second shaft and discharging in a direction of the second shaft, thereby permitting to vary an air suction/discharge structure by forming air flows in left and right sides of the ventilation motor.

Structure of ventilation motor assembly in microwave oven

The present invention relates to a microwave oven. Though the present invention provides a system in a front surface thereof for air communication between inside and outside of the microwave oven, the number of components for the front surface is minimized. That is, vent grill parts and are formed as one unit with the door and the control panel of the microwave oven for covering vent holes and &prime; in the front surface of a main frame from external view. Top ends of the vent grill parts and are opened for permitting inside and outside of the microwave oven to be in communication through the vent holes and &prime;. There may be a louver in the vent grill parts and in correspondence to the vent holes and

Microwave oven having a vent grill formed as part of a door and/or control panel

Door to a microwave oven including a door panel which forms a frame of the door, a front panel fitted to a front face of the door panel, a door frame fitted to rear face of the door panel, and a control part fitted between the front panel and the door frame for receiving a work order from a user, controlling an electric component, and indicating various information, thereby permitting handling of the door and servicing to the control part easy, and preventing damage to the first cable.

Door to microwave oven, control panel and cable assembly

Improved variable code length decoder is disclosed, including a storage part for temporary storage and production of an encoded code word in response to a read signal, a switching part for selective production of the code words from the storage part in response to a switching signal, a barrel shifter for shifting a decoding output window thereon in response to a shift signal in producing a predetermined number of bits of the code word from the switching part for decoding, a storage part for temporary storage and production of the code word from the barrel shifter, a table for producing a decoded code word and a bit length of the code word of the predetermined number of bits stored in the storage part, and a control signal generating part for using the bit length of a code word at the present clock received from the table in generating the switching signal, the shift signal and the read signal.

High speed variable length code decoder

A high speed variable length code (VLC) decoder for decoding in real time data encoded in a system such as MPEG 1, MPEG 2 or HDTV (high definition television) includes a bit stream buffer, a data buffer, a pair of latch units, a pair of selectors, a barrel shifter, a VLC table random logic, an output buffer, an accumulator, and a VLC decoder controller. The VLC decoder controller appropriately controls data flow in the VLC decoder, by using a bit empty signal from the bit stream signal, a data empty signal from the data buffer, a data full signal from the output buffer and a carry signal from the accumulator.

A bit pattern detector for detecting a bit pattern in a parallel bitstream input includes left and right matching units for detecting bits in the bitstream input that match the bit pattern. The left matching unit outputs a plurality of signals to an adder, a multiplexer, and a pattern detector, depending on whether and how many matching bits are detected in the bitstream input. The right matching unit also outputs a signal to the adder. The pattern detector outputs a detection signal depending on the input from the left matching unit and the adder, and also outputs a control signal to the multiplexer. The multiplexer selects and outputs a signal from amongst the signals received thereby from the left matching unit and a size signal corresponding to a size of the bitstream input. The detector also may include a bit pattern register which stores the bit pattern and provides it to the left and right matching units, and a bit number register for storing the signal received from the right matching unit.

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Seoul, South Korea

Su Hwan Kim