Samsung Electronics Co., Ltd.

Skhynix Inc.

Seoul National University

Su-hwan Kim

Deog-Kyoon Jeong

Taek-Sang Song

Young-Lim Park

Hyun-jun Kim

Han-Kyu Chi

Sun-Min Moon

Jae-wan Chang

Gi-Moon Hong

Seok-Min Ye

Woo-Rham Bae

Seong-yul Park

Min-Seong Chu

In a capacitor of an integrated circuit, a crystallization induction film is obtained by oxidizing a surface of an electrode, and a dielectric structure is formed on the crystallization induction film, to reduce defect density generated in the dielectric film, improve leakage current, and reduce equivalent oxide thickness.

Integrated circuit device and method of fabricating the same

A receiver includes a fixed delay unit configured to delay a first clock signal received from a clock channel by a predetermined time and output a second clock signal; a first delay unit configured to delay the first clock signal in response to a first control signal; a first data sampler configured to sample a data signal received from a data channel in response to an output signal of the first delay unit and output a first data signal; a second delay unit configured to delay the first data signal in response to a second control signal and output a second data signal; a second data sampler configured to sample the second data signal in response to the second clock signal; and a delay controller configured to output the first control signal and the second control signal.

Receiver, system including the same, and calibration method thereof

Growing community of inventors

Seoul, South Korea

Su-hwan Kim